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Showing 1 to 20 of 37 for “"Indium Gallium Arsenide"”.
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The Characterization of Liquid Phase Epitaxial Indium-Gallium - Arsenide - Phosphide and Indium-Gallium - Arsenide
The growth of InGaAsP and InGaAs by liquid phase epitaxy (LPE) on InP substrates has been investigated to obtain the optimum crystal growth parameters to produce high quality epitaxial layers. The lattice mismatch of these layers with respect to the underlying InP substrate was determined by X-ray …
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Indium-Gallium-Arsenide Quantum Wire Infrared Photodetectors
Midinfrared (6.3 and 8.4 mum) InxGa 1-xAs/In0.52Al0.24Ga 0.24As quantum wire infrared photodetectors (QRIPs) grown on semi-insulating (001) on-axis InP substrates via solid-source molecular beam epitaxy (MBE) have been fabricated and characterized. The quantum wires (QWRs) were formed using an in …
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Carbon doping and hydrogen passivation in indium gallium arsenide and indium phosphide/indium gallium arsenide heterojunction bipolar transistors grown by metalorganic chemical vapor deposition
The development of carbon doping for producing stable p-type doping profiles in MOCVD-grown GaAs has made MOCVD the preferred technique for production of highly reliable GaAs-based HBT structures. In the InP/InGaAs materials system, however, inefficient C incorporation and amphoteric behavior have …
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Development of inversion-mode and junctionless Indium-Gallium-Arsenide MOSFETs
This PhD covers the development of planar inversion-mode and junctionless Al2O3/In0.53Ga0.47As metal-oxidesemiconductor field-effect transistors (MOSFETs). An implant activation anneal was developed for the formation of the source and drain (S/D) of the inversionmode MOSFET. Fabricated …
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Submicron Scaling in Indium Phosphide/indium Gallium Arsenide Single Heterojunction Bipolar Transistors
Measurement-based characterization of SHBTs scaled down to 0.35 mum was performed, and detailed understanding of do and RF scaling properties was developed. Important scaling phenomena that emerge as the emitter width is scaled to the deep submicron regime were identified and analyzed. A unique …
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Liquid Phase Epitaxial Indium-Gallium-Arsenide - Phosphide Avalanche Photodiodes for Near-Infrared Detection
The fabrication and characterization of InGaAsP/InP avalanche photodiodes for near-infrared detection is described in detail. Particular material requirements which must be satisfied for these devices are considered and the special techniques involved in the use of liquid phase epitaxy which have …
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Submicron Scaling of Indium Phosphide/indium Gallium Arsenide Heterojunction Bipolar Transistors Toward Terahertz Bandwidths
This work extends the operating speed of InP HBTs to frequencies of fT = 604 GHz though aggressive delay reductions and advanced fabrication processes. Delay reduction is employed by a combination of vertical scaling, lateral scaling, and epitaxial engineering to reduce the transit and charging …
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Indium Gallium Arsenide-Gallium Arsenide-Aluminum Gallium Arsenide Strained-Layer Lasers and Laser Arrays
Several characteristics of In$\sb{x}$Ga$\sb{1-x}$As-GaAs-Al$\sb{y}$Ga$\sb{1-y}$As separate confinement heterostructure strained-layer quantum well lasers are investigated in this work. The main implications of strain are examined briefly, including the importance of a critical layer thickness, …
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Electron Drift Velocities at High Electric Fields in Gallium-Arsenide and Indium-Gallium - Arsenide
A microwave time-of-flight technique has been used to measure electron drift velocities in n-GaAs and n-In(,0.53)Ga(,0.47)As over a wide range of temperatures and electric field strengths.
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Analysis of the Indium Gallium Arsenide/aluminum Gallium Arsenide Modulation-Doped Field Effect Transistor
Described in this thesis are the growth and characterization of (In,Ga)As/(Al,Ga)As modulation-doped field-effect transistors (MODFETs). The use of a thin strained layer of (In,Ga)As for the current-carrying channel takes advantage of the superior transport properties of this material while …
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Theoretical study of MBE growth of indium gallium arsenide semiconductor compound on gallium arsenide substrate
… the segregated In layer to crystalline layer and gallium desorption to surface layer. The rate of the processes are assumed Arrhenius type with concentration dependent activation energies. The simulated In incorporation coefficient versus substrate temperature is in excellent agreement with the …
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Liquid phase epitaxial growth and heterointerface characteristics of long-wavelength indium gallium arsenide phosphide heterostructures
"Data are presented that demonstrate that the InGaAsP quaternary grown by constant temperature liquid phase epitaxy on InP substrate can, under certain growth conditions, exhibit considerably narrower diffraction profile half-widths than previously reported. The double crystal x-ray diffraction …
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Solution Kinetics and Impact Ionization in the Indium-Gallium - Arsenide Phosphide Alloy System (Crystal Growth, Photodetectors)
This thesis covers topics in crystal growth, solution kinetics, device fabrication, and device physics in the InGaAsP/InP material system. It is divided into three sections. Chapter I is a detailed account of the liquid phase epitaxial (LPE) crystal growth of In(,1-x)Ga(,x)As(,y)P(,1-y) layers …
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Strained-Layer Indium Gallium Arsenide-Gallium Arsenide-Aluminum Galium Arsenide Photonic Devices by Metalorganic Chemical Vapor Deposition
In light of the substantial performance advantages of quantum well lasers relative to double heterostructure lasers, extensive efforts have been directed toward producing quantum wire systems. In view of this, the final subject of this dissertation details the fabrication and characterization of …
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Reliability and Mode Behavior of Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum Well Heterostructure Lasers
Data are presented on ten-stripe AlxGa1-xAs-GaAs-In yGa1-yAs quantum well heterostructure edge-emitting lasers showing results of stochastic recoupling of the laser at the Fabry-Perot interface. Scattering by epoxy or oil embedded with Al2O3 polishing compound or 10-mum diameter Al powder results …
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High Performance Indium-Gallium-Arsenide / Indium-Aluminum-Arsenide Transistors Grown on Indium-Phosphide by Molecular Beam Epitaxy
Described in this thesis are the growth by molecular beam epitaxy (MBE) and characteristics of InGaAs/InAlAs transistors. Superior properties of the InGaAs/InAlAs system have attracted a great deal of interest in electronic and optical device applications for this material system, and spurred …
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Hydrogenation of High Purity Gallium-Arsenide and Liquid Phase Epitaxy Growth of High Purity Indium-Gallium-Arsenide
There has been a significant interest in the hydrogenation of GaAs because it is found to passivate a variety of deep and shallow impurities. In this study, the concentration of donors and acceptors in high purity n- and p-type GaAs before and after hydrogenation has been investigated by …
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Vapor Phase Epitaxial Growth of Gallium Arsenide, Indium Phosphide, and Indium Gallium Arsenide by the Hydride Technique
The use of InGaAsP alloys for optical fiber communication systems is discussed. The advantages and various types of vapor phase epitaxial growth systems are examined before looking at the open tube growth process in detail. Using the criteria for high purity systems, which are thoroughly reviewed, …
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Optical properties of gallium arsenide and indium gallium arsenide quantum wells and their applications to optoelectronic devices
In this thesis we investigate the optical properties of modulation doped GaAs/AlGaAs and strained-layer undoped InGaAs/GaAs multiple quantum well structures (MQWS). The phenomena studied are the effects of carrier, strain, and the electric field on the absorption of excitons. For GaAs/AlGaAs …
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