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Showing 1 to 4 of 4 for “"Indium Arsenide Phosphide"”.
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Fabrication of Gallium Indium Arsenide Phosphide Quantum Wire Heterostructures for Optoelectronic Applications
Thermal annealing techniques were also applied to QWRs. After this treatment, emissions were found to be at a higher energy than the as-grown samples, attributed to the disordering of the lateral composition modulation which, in effect, raised the bandgap energy of the QWR material. In addition, …
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Indium Gallium Arsenide and Indium Arsenide Phosphide Injection Lasers and Radiative Recombination in Nitrogen-Zinc-Doped Gallium Arsenide Phosphide
Made available in DSpace on 2015-05-12T22:39:00Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7411966.PDF: 3851014 bytes, checksum: cd1a4a475e1514b2d5520a344358ec96 (MD5) Previous issue date: 1973
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Indium Gallium Arsenide and Indium Arsenide Phosphide Injection Lasers and Radiative Recomination in Nitrogen-Zinc-Doped Gallium Arsenide Phosphide
Submitted by Jesse Garrison (jagarris@illinois.edu) on 2011-11-14T19:00:55Z No. of bitstreams: 1 1973_campbell.pdf: 4175372 bytes, checksum: ed3da0d70330dce9e8d913abbf574623 (MD5)
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Contact-free Electrical Characterisation of Novel Materials Using Terahertz Spectroscopy
… degrades the optoelectronic properties of indium arsenide (InAs), indium arsenide phosphide (InAsP) and tin-based halide perovskites were extensively studied using terahertz spectroscopy. An ultra-thin InP layer with a ∼2- 3 nm thickness and a higher band gap in comparison, has been …