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Showing 1 to 10 of 10 for “"Indium Arsenide (InAs)"”.
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Indium arsenide quantum dots for single photons in the communications band
… towards engineering and characterizing epitaxial Indium Arsenide (InAs) quantum dots as single photon sources in the optical communications C-Band (Conventional Band; 1535 nm-1565 nm wavelength). First, the underlying theory of semiconductor quantum dots and the necessary tools from quantum optics …
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Synthetic Design of Optical Emitters
… a new approach to the precursor chemistry of indium arsenide (InAs) QDs based on the redox chemistry of In. The judicious combination of an As(III) and an In(I) precursor yields an atomeconomical redox couple employing safe and commercially available compounds. A pre-equilibrium based on the …
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Contact-free Electrical Characterisation of Novel Materials Using Terahertz Spectroscopy
… degrades the optoelectronic properties of indium arsenide (InAs), indium arsenide phosphide (InAsP) and tin-based halide perovskites were extensively studied using terahertz spectroscopy. An ultra-thin InP layer with a ∼2- 3 nm thickness and a higher band gap in comparison, has been …
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The Role of Quantum Dot Size on the Performance of Intermediate Band Solar Cells
… cells (IBSCs). More specifically, the effect of indium arsenide (InAs) QD height on the open circuit voltage and solar cell efficiency was studied in a systematic way. To explore this effect in QD solar cells, several solar cells (SCs) were grown with varying InAs QD heights. All experimental …
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Synthesis and characterization of infrared quantum dots
… on controlling the size and size distribution of indium arsenide and cadmium arsenide QDs. In the nanocrystal community, classical nucleation and growth is often invoked to explain size focusing. However, this model lacks predictive power and contradicts what is known about the chemistry of QD …
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Nanowire Transistors and RF Circuits for Low-Power Applications
… elements from group III and V (III-Vs), such as indium arsenide (InAs), have the possibility to dramatically decrease power consumption. The reason is the inherent electron transport properties of III-Vs, where an electron can travel, in the order of, 10 times faster than in Si. In the projected …
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Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications
… fMax of 1.2 THz. The 6.1 A lattice family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future material system for high speed device development. Extremely high electron mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation doped InAs-AlSb structures. …
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Passivation of III–V Nanowires Using Dielectrics Deposited by Atomic Layer Deposition
… (TFETs) [2] and high-frequency transistors [ 3]. Indium arsenide (InAs) is of interest as it has a direct narrow band gap of 0.36 eV at 300 K and 0.40 eV at 77 K [4], an electron affinity around 4.9 eV [ 4] and high electron mobilities ranging from 20,000 and 60,000 cm² V¯¹ s¯¹ at temperatures of …
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Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition
Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of …
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Selective lateral nano-epitaxy for manufacturable nanowire electronics
… growth, heterogeneous SLE of high-quality planar InAs nanowires on GaAs is demonstrated. On the application side, GaAs planar nanowire tri-gate MOSFETs and a current-source loaded amplifier circuit based on nanowire MESFETs are presented. Gate-all-around (GAA) InAs planar nanowire MOSFETs are …