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Showing 1 to 4 of 4 for “"InMnSb"”.
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Spin and Carrier Relaxation Dynamics in InAsP Ternary Alloys, the Spin-orbit-split Hole Bands in Ferromagnetic InMnSb and InMnAs, and Reflectrometry Measurements of Valent Doped Barium Titanate
… The materials that I studied included InAsP, InMnSb and InMnAs, and BT-BCN. I have employed several advanced time resolved and magneto-optical techniques to explore unexplored properties of these structures. The first class of the materials were the ternary alloys InAsP. The electron g-factor …
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Probe of Coherent and Quantum States in Narrow-Gap Based Semiconductors in the Presence of Strong Spin-Orbit Coupling
… newest member of III-V ferromagnetic structures, InMnSb, as well as InSb films and InSb/AlInSb quantum wells. The emphasis was on dynamical aspects such as charge and spin dynamics in order to address several important issues of the spin-related phenomena. The objectives in this project were to: …
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Time-Resolved Studies of Magnetic and Non-Magnetic Narrow-Gap Semiconductors
… wells with different confinement potentials; InMnSb films, the newest III-V ferromagnetic semiconductors; and InAs films. The samples for these studies have been provided by the groups of Prof. Santos at the University of Oklahoma, Prof. Furdyna at the University of Notre Dame, and Prof. Guido …
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Time Resolved Spectroscopy in InAs and InSb based Narrow-Gap Semiconductors
As the switching rates in electronic and optoelectronic devices are pushed to even higher frequencies, it is crucial to probe carrier dynamics in semiconductors on femtosecond timescales. Time resolved spectroscopy is an excellent tool to probe the relaxation dynamics of photoexcited carriers; …