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Showing 1 to 4 of 4 for “"InGaN quantum wells"”.
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A study of the elastic and electronic properties of III-nitride semiconductors
… made. Particular attention is given to wurtzite quantum wells (QWs) based on the technologically important InxGa1_xN alloy system. An investigation of the effects of structural inhomogeneities in these systems is made; specifically, the impact of random alloy fluctuations and well width …
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A tight-binding analysis of the electronic properties of III-nitride semiconductors
… alloy fluctuations in bulk AlGaN alloys and InGaN quantum wells. We calculate the band gap evolution of Al1_xGaxN across the full composition range and compare it to experiment as well as fitting bowing parameters to the band gap as well as to the conduction band and valence band edges. We …
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Porosity in Nitride Semiconductors
… of 89% at 324 nm and ECE has been applied to InGaN quantum wells with the aim of enhancing the luminescence. Measurements indicate that ECE creates both enhancement and a blueshift in the emission peak. Controlling and characterising pore formation at this scale is a huge challenge and further …
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Nitride semiconductors studied by atom probe tomography and correlative techniques
… origin of charge carrier localisation in InGaN. Alloy inhomogeneities have often been suggested to provide this localisation, yet APT has revealed InGaN quantum wells to be a statistically random alloy. Electron beam irradiation in the TEM caused damage to the InGaN, however, and a …