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Showing 1 to 1 of 1 for “"InGaAs MOS"”.
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An investigation of border traps and interface states in high-k/InGaAs metal-oxide-semiconductor systems
… field effect transistors (MOSFETs) is to replace SiO2/Si structure with high dielectric constant (high-k) oxides on high mobility channel materials (e.g. InGaAs), which have the potential to achieve a comparable on current and operating frequency to silicon, but at a reduced …