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Showing 1 to 20 of 198 for “"InGaAs"”.
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Rashba-Effekt in niedrigdimensionalen InGaAs/InP Strukturen
… coupling of electrons in low dimensional InGaAs/InP heterostructures, referred to as Rashba Effect, is investigated. It focuses on the basic features of the spin-orbit interaction in quasi one-dimensional structures (quantum wires) with typical widths of 150 to 1000 nm. These quantum wires …
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InGaAs Quantum-Well MOSFETs for logic applications
InGaAs is a promising candidate as an n-type channel material for future CMOS due to its superior electron transport properties. Great progress has taken place recently in demonstrating InGaAs MOSFETs for this goal. Among possible InGaAs MOSFET architectures, the recessed-gate design is an …
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InGaAs self-aligned HEMT for logic applications
… use as a channel material. Of these materials, InGaAs offers the best balance between a mature technology and high mobility. InGaAs high electron mobility transistors (HEMTs) have already been shown to hold great promise for logic devices but they are typically not self-aligned nor enhancement …
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InGaAs/GaAsSb type-Il heterojunction vertical tunnel-FETs
… designs. In this thesis, vertical TFETs based on InGaAs/GaAsSb heterostructure are investigated in terms of design, fabrication and electrical characterization. Ino.53Gao.47As/ GaAso.5Sb0.5 heterostructure vertical TFETs are fabricated with an airbridge structure, designed to prevent parasitic …
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InAlAs/InGaAs/InP HEMTs with pseudomorphic Schottky barriers
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
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Defect engineering of InP and InGaAs for optoelectronic applications
InP and InGaAs lattice matched to InP hold a special place in the optoelectronics industry because of their room temperature bandgaps of 1.27 and 0.73 e V; these translate into emission/ detection wavelengths of - 0.9 and 1.6 μm As such, they are ideal for the development of long wavelength …
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Defect engineering of InP and InGaAs for optoelectronic applications
InP and InGaAs lattice matched to InP hold a special place in the optoelectronics industry because of their room temperature bandgaps of 1.27 and 0.73 e V; these translate into emission/ detection wavelengths of - 0.9 and 1.6 μm As such, they are ideal for the development of long wavelength …
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Surface roughness anisotopy on mismatched InAlAs/InGaAs/InP heterostructures
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
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Analysis of Mo sidewall ohmic contacts to InGaAs fins
… are developed. FSWC structure is made for Mo/n+-InGaAs contacts. The key step is that the fin etch mask on top of InGaAs is not removed and the metal (Mo) is sputtered so that InGaAs is contacted by the Mo only through the sidewall. Therefore, only a sidewall contact is made without a top …
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Morphology of InGaAs Multilayer Nanostructure on GaAs High-Index Surfaces
… by growing multiple layers of strained InGaAs on GaAs high index surface. The knowledge learned would help to achieve a comprehensive picture of strain-driven nanostructure evolution. Ordered arrays of InGaAs quantum dots were demonstrated on GaAs(311)B. The ordering patterns depended on …
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Electrical degradation of InAlAs/InGaAs metamorphic high electron mobility transistors
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
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Dynamics of the kink effect in InAlAs/InGaAs/InP HEMTs
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Plastic Relaxation of Highly Tensile Strained (100) Ge/InGaAs Heterostructures
… layers grown on larger lattice constant InGaAs or GeSn have attracted great research interest. However, no previous studies have investigated the plastic relaxation occurring in these and#949t-Ge layers. Here, we experimentally demonstrate that plastic relaxation occurs in nearly all …
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