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Showing 1 to 3 of 3 for “"InAs/GaSb T2SL"”.
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Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection
… and military applications. Devices based on the InAs/GaSb or InAs/InAsSb strained-layer-superlattices (SLSs) have gained special attention as the next generation IR photodetectors for replacing current technology based on mercury cadmium telluride. When in contact, InAs and GaSb (or InAs and …
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Unipolar barrier strained layer superlattice infrared photodiodes : physics and barrier engineering
Type-II InAs/GaSb Strained Layer Superlattice (T2SL) is an emerging technology for infrared detection. They are being seen as a threat to 50 years old incumbent technology based on Mercury-Cadmium-Telluride (MCT) system. T2SL have been theoretically predicted to outperform MCTs. This dissertation …
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Antimony-based type-II superlattice infrared detectors
… calculations have predicted high performance for InAs/GaSb type-II superlattice structures, which rely on mature growth of III-V semiconductors and offer many levels of freedom in design due to band structure engineering. This work focuses on the fabrication and characterization of type-II …