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Showing 1 to 20 of 188 for “"InAs"”.
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InAs Nanowire Devices and Circuits
… different lattice constants. By introducing InAs as a channel material, a much higher electron mobility than for Si is achieved. In this work, simulations of nanowire-based devices are performed and the ultimate performance is predicted. A nanowire transistor architecture with a realistic …
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Electronic and optical properties of InAs nanocrystals
… electronic and opti- cal properties of spherical InAs nanocrystals. Our calculated interband (valence-to- conduction) absorption spectra reproduce the features observed experimentally both qualitatively and quantitatively. The results relative to intraband (valence-to-valence and …
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Vertical InAs Nanowire Devices and RF Circuits
… are made in a high-mobility III-V semiconductor, InAs, allowing for faster electrons and higher currents than Si. This device type is a potential candidate to either replace or complement Si-based MOSFETs in digital and analogue applications. Single balanced down-conversion mixer circuits were …
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Mid-IR type-II InAs/GaSb nanoscale superlattice sensors
… of the whole infrared system. In recent years, InAs/GaSb superlattice based detectors have appeared as an interesting alternative to the present-day IR detector systems. These heterostructures have a type-II band alignment such that the conduction band of InAs layer is lower than the valence …
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Dopant Incorporation in InAs/GaAs Quantum Dot Infrared Photodetectors
… for excessive dark current in QDIPs. </p><p>InAs/GaAs QDIPs were grown using solid source molecular beam epitaxy (MBE) with different doping conditions. The QDIPs were optically characterized using photoluminescence and Fourier transform infrared (FT-IR) spectroscopy. Devices were fabricated …
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Electronic Transport in Highly Mismatched InAs Films on GaAs
Electrical properties of Si- and Mg-doped InAs epitaxial layers grown by MOCVD were studied by performing magneto-transport measurements at different temperatures, from 300 K down to 1.2 K. The longitudinal magnetoresistance and Hall effect indicate a three-band system existing in n-type (p-type) …
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Nanoscale characterization of InSb/InAs novel functional semiconductor nanostructures for LEDs / Caracterización a nanoescala de nanoestructuras funcionales novedosas de InSb/InAs para LEDs
… Among various III-V epitaxial QDs, InSb/InAs QDs emit light at the mid-infrared (MIR) range (3-5 µm) through the tuning of Sb composition and as a result, these QDs can be used to detect various hazardous gases with MIR signatures, among other applications. In this framework, the …
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Defect investigations in InAs/GaSb type-II strained layer superlattice
InAs/GaSb type-II strained layer superlattices are a material used for infrared detection. By adjusting the thickness of the InAs and GaSb layers, the material bandgap can be tuned to absorb photons from 3-30 um. Compared to competing materials such as HgCdTe and InSb, InAs/GaSb superlattices are …
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InAs/Ga(In)Sb superlattice based infrared detectors using nBn design
… detectors operating at higher temperatures. InAs/GaSb strained layer superlattice (SLS) photodectors are now considered as a promising technology for both MWIR and LWIR wavelength ranges. The bandgap of the SLS can be adjusted by controlling the thickness of the constituent InAs and GaSb …
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Studies of InAs and GaAs layers prepared by molecular beam epitaxy
… doping of single crystal thin films of GaAs and InAs by the technique of molecular beam epitaxy (MBE). One micron thick unintentionally doped films of InAs were deposited onto GaAs substrates at the relatively low growth temperature of 370°C and GaAs films were grown over the range 400 - 650°C. A …
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Characterisation and simulation of InAs/InAsSb structures for mid-infrared LEDs
This work reports research on InAs/InAsSb structures focusing on their photoluminescence and electroluminescence spectra over the 4 – 300 K temperature range. The purpose was to gain an insight into developing mid – infrared light – emitting diodes (LEDs) operating with sufficiently high power and …
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Applications of Cathodoluminescence in Plasmonic Nanostructures and Ultrathin InAs Quantum Layers
… we investigated high quality ultrathin InAs layers in InAs/GaAs heterostructures. The CL measurement reveals the formation of In rich clusters for sub monolayers. The electron beam excitation provides a better spatial resolution to observe the variation of CL signal at different …
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Time Resolved Spectroscopy in InAs and InSb based Narrow-Gap Semiconductors
… Probing carrier and spin relaxation dynamics in InAs and InSb based narrow-gap semiconductors is crucial to understand the different scattering mechanisms related to the systems. Similar studies in InSb quantum wells are also intriguing, especially for their scientifically unique features (such …
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Longwave and bi-color type-II InAs/(In)GaSb superlattice infrared detectors
… past few years, interband transitions in type II InAs/GaSb strain layer superlattices (SL)have emerged as a competing technology among other IR systems. Although MCT and QWIP technologies are relatively more mature than the SL technology, the SL technology has potential to enhance performance in …
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Investigation of InAs/GaSb superlattice based nBn detectors and focal plane arrays
… the weight and cost of a infrared system. The InAs/Ga(In)Sb strained layer superlattice (SLS) material system proposed for the IR detection in 1987, has been considered in recent years as an interesting alternative to the present day IR detection technologies. InAs/GaSb SLS has a type II band …
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A study of InAs based quantum structures for use in optoelectronic devices
… thesis provides an extensive investigation of InAs based NWs for use in the photodetection applications. To achieve this goal, the structural and optical properties of InAs NWs and InAs NW-based quantum materials (e.g., InAsSb NWs, InAs/AlSb NWs and InAs/GaSb core-shell NWs) have been …
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Coherent Interaction Between Laser Photons and Single Spins in InAs Quantum Dots
… laser photons and single spins in two types of InAs quantum dots. Quantum dots are promising candidates for quantum information applications due the potential for on-demand emission of highly pure and indistinguishable photons. Achieving coherent interactions between photons and quantum dot …
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Epitaxie von InAs-Quanten-Dash-Strukturen auf InP und ihre Anwendung in Telekommunikationslasern
… Hand von Teststrukturen optimiert. Scheidet man InAs auf einem InP(100)-Substrat ab, so bilden sich – anders als auf GaAs – keine runden InAs-Quantenpunkte, sondern unregelmäßige, strichförmige Strukturen mit einer klaren Vorzugsorientierung, sogenannte Dashes. Verschiedene Wachstumsparameter, …
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