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Showing 1 to 8 of 8 for “"InAlN"”.
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Development of InAlN HEMTs for space application
This thesis investigates the emerging InAlN high electron mobility transistor (HEMT) technology with respect to its application in the space industry. The manufacturing processes and device performance of InAlN HEMTs were compared to AlGaN HEMTs, also produced as part of this work. RF gain up to 4 …
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MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications
… including AlN, u-AlGaN, Si-doped AlGaN, and InAlN, serving as sample wafers for fabrication of ultraviolet (UV) LEDs, in order to replace the conventional bulky, expensive and environmentally harmful mercury lamp as new UV light sources. For application to UV LEDs, reducing the threading …
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Reliability of W-Band InAIN/GaN High Electron Mobility Transistors
… is the use of a new barrier material, i.e., InAlN. Due to its high spontaneous polarization, if InAlN is used as a barrier material in GaN HEMTs, a much smaller layer thickness is required compared with conventional HEMTs. This enables further barrier thickness scaling and therefore gate …
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Crecimiento de nitruros del grupo III por epitaxia de haces moleculares para la fabricación de diodos electroluminiscentes en el rango visible-ultravioleta
… La morfología y composición del ternario (0001) InAlN fueron analizadas en función de la relación de flujos y de la temperatura del sustrato. De manera análoga al GaN, los resultados obtenidos se emplearon para construir un diagrama universal de crecimiento. La obtención de capas de InxAl1-xN con …
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Lattice Engineering of III-Nitride Heterostructures and Their Applications
… of composition modulated nanostructure in InAlN thin films with X-ray diffraction. We found the development of the nanostructure depends on growth temperature, and the composition modulation has impacts on carrier recombination dynamics. We also showed that the controlled relaxation of a …
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Nitride semiconductors studied by atom probe tomography and correlative techniques
… then observed by APT. The alloy homogeneity of InAlN was also studied, and this alloy system provided a unique opportunity to study gallium implantation damage to the APT sample caused during sample preparation by the focused ion beam (FIB). The combination of APT with traditional microscopy …
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Nanoscale quantification of stress and strain in III-V semiconducting nanostructures
… and map the strain fields in top-down fabricated InAlN/GaN high electron mobility transistor structures and GaAs/GaAsP core-shell nanowires grown by a particle-mediated vapor-liquid-solid mechanism. By comparing our experimental results to strain fields calculated by finite element analysis, we …
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Ingeniería de estructura y composición de nitruros componentes de transistores HEMT de nueva generación
… been focused on heterostructures containing (i) InAlN, AlGaN, InGaN and InAlGaN barrier layers, grown on GaN (0001), for the optimization of epitaxial processes in high efficiency GaN based HEMTs (GaN-HEMTs) grown on sapphire or silicon carbide substrates; and (ii) buffer and active polar GaN …