Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 3 of 3 for “"InAlGaN"”.
-
Crecimiento de nitruros del grupo III por epitaxia de haces moleculares para la fabricación de diodos electroluminiscentes en el rango visible-ultravioleta
… acerca de la incorporación de In en (0001) InAlGaN en función de la temperatura del sustrato y la relación de flujos Al/Ga muestra que la incorporación de In disminuye con ambos parámetros. La calidad cristalina de las capas de InAlGaN resultó ser comparable a la de los sustratos de …
-
Lattice Engineering of III-Nitride Heterostructures and Their Applications
… epitaxial layer. Finally, we synthesized an InAlGaN thin films and a multi-quantum-well structure. Significant emission enhancement in the UVB range (280 – 320 nm) was observed compared to AlGaN thin films. The nature of the enhancement was investigated experimentally and numerically, …
-
Ingeniería de estructura y composición de nitruros componentes de transistores HEMT de nueva generación
… containing (i) InAlN, AlGaN, InGaN and InAlGaN barrier layers, grown on GaN (0001), for the optimization of epitaxial processes in high efficiency GaN based HEMTs (GaN-HEMTs) grown on sapphire or silicon carbide substrates; and (ii) buffer and active polar GaN layers, grown on Si (111) …