Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 7 of 7 for “"Impurity-induced disordering"”.
-
High-power single-mode vertical-cavity surface-emitting lasers via impurity induced disordering
Design principles of impurity-induced disordered (IID) vertical-cavity surface-emitting lasers (VCSELs) are presented, including the influence of IID on electrical, optical, and mode-control properties. A transfer matrix method (TMM) is developed to account for the diffusion of Group III atoms of …
-
Strain-controlled impurity-induced disordering for apertures in single-mode vertical-cavity surface-emitting lasers
… sensors. Through the initiation of Zn diffusion, impurity-induced disordering (IID) has been demonstrated to enable optical mode control, increased modulation frequencies, and provide carrier and photon confinement in vertical-cavity surface-emitting lasers. While disordering provides a …
-
Impurity-induced disordering of vertical-cavity surface-emitting lasers: Applications to polarization control and high-speed modulation
Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2022-11-11 without embargo terms
-
Wavelength Modification by Thermal Annealing and Stripe Geometry Definition by Impurity-Induced Disordering in Quantum-Well Laser Diodes (Diffusion, Gallium-Arsenide, Iii-v Semiconductors)
The effects of thermal annealing ((TURN)900(DEGREES)C) on quantum-well laser diode properties are investigated. The shift to higher energies caused by inter-diffusion of Al and Ga at the quantum-well interfaces in modeled by a modified Poschl-Teller potential. The interdiffusion coefficient …
-
Characterization of S-bend optical waveguides fabricated by impurity- and vacancy-induced layer disordering
… defined by Zn, SiO$\sb2$, and In/SiO$\sb2$ Impurity-Induced Layer Disordering (IILD) of a single GaAs quantum-well graded barrier laser structure are investigated using raised-cosine S-bend geometries. The 3-dB transition length for a 100 $\mu$m offset S-bend waveguides fabricated using the …
-
Strain-controlled disorder-defined apertures for optical mode control in vertical-cavity surface-emitting lasers
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-12-01
-
Enhanced beam quality and polarization stability in oxide-confined Vertical-Cavity Surface-Emitting Lasers via anti-phase optical coatings and disorder-defined apertures
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01