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Showing 1 to 20 of 70 for “"Iii-v semiconductor"”.
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Characterization of novel III-V semiconductor devices
This thesis presents the characterization of tunnel junctions and tunnel-junction-coupled lasers. The reverse-biased leakage current in a tunnel junction can be exploited to tunnel electrons from the valence band of one active region to the conduction band of a second active region. Thus, …
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Growth of III-V semiconductor lasers on silicon
The growth of reliable III-V semiconductor lasers on Si would be a significant step toward the fabrication of an opto-electronic integrated circuit, but reliable III-V semiconductor lasers grown on Si have yet to be reported. Many problems not encountered when growing III-V lasers on III-V …
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In Situ Surface Studies of III-V Semiconductor Compounds
… (STM) has been used to advance the knowledge of semiconductor grow processes. Hybridisation of STM with other analytical methods and the Molecular Beam Epitaxy (MBE) growth technique allowed a flexible and diverse approach to growth front exploration. The first hybrid, limited the applicability …
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Resonant Raman scattering studies of III-V semiconductor microstructures
… inelastic light scattering technique, explores III-V semiconductors by conveying crystal lattice structural information and by probing carrier dynamics both directly and via the electron-phonon interaction. We have examined three physical systems accentuating three aspects of Raman utility. …
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Resonant Raman scattering studies of III-V semiconductor microstructures
… inelastic light scattering technique, explores III-V semiconductors by conveying crystal lattice structural information and by probing carrier dynamics both directly and via the electron-phonon interaction. We have examined three physical systems accentuating three aspects of Raman utility. …
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Fabrication and photonics properties of III-V semiconductor nanowire structures
<p>III-V semiconductor nanowires (NWs) have shown great potential to be building blocks for optical, optoelectronic, and electronic devices due to their special transverse confinement of electrons and photons along the nanowire axis. In addition, semiconductor nanowires with subwavelength …
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Optical Properties of Type III-V Semiconductor Spherical Quantum Dot Heterostructures
… electronic structure and optical properties of semiconductor heterostructures. Our emphasis will be on type III-V semiconductors. Such structures, have a great potential for increasing efficiencies, but they also possess highly degenerate and complex valence band structures. Therefore, we seek …
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Theory of the optical properties of III-V semiconductor quantum wells
… the electronic and optical properties of III-V semiconductor quantum wells, specifically those based on the GaAs-AlGaAs system. Both the linear and non-linear optical properties of these systems are considered. A theoretical model for the refractive index in GaAs-AlGaAs quantum well …
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Phonon-assisted laser operation of III-V semiconductor quantum well heterostructures
Data are presented demonstrating that the control of the edge-to-edge resonator Q across a cleaved rectangular sample is essential in identifying unambiguously photopumped phonon-assisted laser operation of Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As-GaAs quantum well heterostructures (QWHs), strained-layer …
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Monolithic heteroepitaxial integration of III-V semiconductor lasers on Si substrates
… ( 2 700⁰ C) initiation with properly chosen V/III gas flow ratio yields high-quality, stacking fault-free GaAs films on Ge/GeSi/Si substrates, but also encourages the vapor-phase transport of Ge from the substrate into the active regions of integrated GaAs devices. A new two-step GaAs …
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Monolithic integration of III-V semiconductor materials and devices with silicon
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.
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Metal-assisted chemical etching of III-V semiconductor materials for optoelectronic applications
Made available in DSpace on 2016-03-02T19:33:17Z (GMT). No. of bitstreams: 2 ZHAO-THESIS-2015.pdf: 2077971 bytes, checksum: 160453c3994747e9326d0908a0f90983 (MD5) LICENSE.txt: 4207 bytes, checksum: badcc874098be4440f0e37e192b9525d (MD5) Previous issue date: 2015-10-07
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Growth and application of planar III-V semiconductor nanowires grown with MOCVD
The semiconductor nanowire has been widely studied over the past decade and identified as a promising nanotechnology building block with application in photonics and electronics. The flexible bottom-up approach to nanowire growth allows for straightforward fabrication of complex 1D nanostructures …
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Flexible and substrate-free optoelectronic devices based on III-V semiconductor nanowires
III-V nanowires have been the subject of intense research interest for the past 20 years, as their unique optical and electronic properties, which arise from their nanoscale dimensions and composition, make them particularly suited for high-performance opto-electronic devices. Since epitaxial …
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Investigation of the Interface Recombination Velocity of Native Oxide/iii-V Semiconductor Interfaces
The activation energy of the IRV was extracted from variable temperature TRPL measurements performed on selected samples. The activation energies of the interface recombination velocities agreed with previously established results on unoxidized material interfaces.
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Preparation and characterization of in situ deposited metal-insulator-III-V semiconductor devices
… and characterization of in-situ deposited III-V semiconductor-based Metal-Insulator-Semiconductor (MIS) devices are described. The two III-V semiconductors investigated were $\rm In\sb{0.53}Ga\sb{0.47}As$ and GaAs. The problems related to air exposure of the semiconductor surface in ex-situ …
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Process development and fabrication of photonic crystal based III-V semiconductor optical sources
Semiconductor laser diodes play a vital role in modern technology- in such applications as facial recognition and high-speed data transmission for which efficient operation in single mode emission is desired. Vertical Cavity Surface Emitting Laser (VCSEL) diodes are at the forefront for these …
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Slow-wave electrode structures for III-V semiconductor based electro-optic travelling-wave modulators
… particularly useful if they are fabricated on semiconductor materials since they may be monolithically combined with other electronic and/or optoelectronic devices. Conventional travelling-wave electro-optic modulators fabricated using III-V semiconductor materials such as gallium arsenide and …
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