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Showing 1 to 4 of 4 for “"Iii-n Materials"”.

  1. Laser Annealing and Dopant Activation in III-V Materials

    … implement non-traditional device structures and materials into computer chips. Compound semiconductors are strong candidates for materials to replace silicon based on their improved speed and efficiency with, importantly, lower power requirements. III-V materials, like InGaAs and InAs, are …

    cornell Repository record for Laser Annealing and Dopant Activation in III-V Materials (opens in a new tab)

  2. Less strain, more gain_nano_patterning III-N thin films

    … there has been intensive research worldwide in IIIN based nanowires for its many unique photonic and electrical properties at this scale. There are several advantages to nanostructuring III-N materials, including increased light extraction, increased device efficiency, reduction of efficiency …

    cork Repository record for Less strain, more gain_nano_patterning III-N thin films (opens in a new tab)

  3. Design and fabrication of nitride-based solar cells and integration for tandem cell

    A practical III-nitride (III-N) photovoltaic (PV) application consists of transfer to a foreign substrate with enhanced functionality and/or integration with mature group IV or III-V based solar cell technologies. This requires a lift-off technique compatible with good quality III-N materials, with …

    gatech Repository record for Design and fabrication of nitride-based solar cells and integration for tandem cell (opens in a new tab)