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Showing 1 to 20 of 29 for “"III-nitrides"”.
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Ion-beam processes in group-III nitrides
Group-III-nitride semiconductors (GaN, InGaN, and AlGaN) are important for the fabrication of a range of optoelectronic devices (such as blue-green light emitting diodes, laser diodes, and UV detectors) as well as devices for high-temperature/high-power electronics. In the fabrication of these …
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Ion-beam processes in group-III nitrides
Group-III-nitride semiconductors (GaN, InGaN, and AlGaN) are important for the fabrication of a range of optoelectronic devices (such as blue-green light emitting diodes, laser diodes, and UV detectors) as well as devices for high-temperature/high-power electronics. In the fabrication of these …
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Commercialization of group III nitrides-on-silicon technologies
… manufacturers proactively. InN and In-rich nitrides can complement maturing GaN and Ga-rich nitrides technologies, resulting in new applications and products in future. While the growth of InN films is currently very challenging, it is believed that the experience and revenue obtained from …
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Cubic III-Nitrides for photonics: Physics, materials, and devices
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01
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Reliability Characterisation of III-Nitrides Based Devices for Technology Development
III-nitrides based devices are considered as outstanding options for a range of extremely relevant applications. These devices can significantly improve the efficiency of high-power switching appliations. They are predicted to dominate applications in the low carbon economy. In recent years, these …
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Electron Injection-induced Effects In Iii-nitrides: Physics And Applications
… investigated the effect of electron injection in III-Nitrides. The combination of electron beam induced current and cathodoluminescence measurements was used to understand the impact of electron injection on the minority carrier transport and optical properties. In addition, the application of the …
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Multi-scale modelling of III-nitrides: from dislocations to the electronic structure
… issues of simulating the electronic structure of III-nitride alloys by means of the first principle methods. The first part of this work discusses several topics involving dislocation theory. The objectives were: (i) to apply general elasticity approaches known from the literature to the specific …
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Vacuum Transistors Based on III-Nitrides Field Emitter Arrays with Self-Aligned Gate
… field emission device performance and stability, III-Nitride semiconductors are attracting significant attention recently thanks to their engineerable electron affinities and high bonding energies. Ideally, the degenerately-doped n-type semiconductors with low electron affinities can have low work …
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AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework
… and adatoms in monolayer MoS2, including groups III and IV dopants, as well as magnetic transition metal atoms such as Mn, Fe, Co, V, Nb, and Ta. By using DFT over a 5x5 atomic cell, we identify the most promising element candidates for p-doping of MoS2. Specifically, we found VB group impurity …
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Overcoming Longstanding Synthesis Challenges Toward Realizing the Full Device Potential of III-Nitride Semiconductors
III-nitrides have the potential to address a large number of fundamental needs for semiconductor device applications, including full-spectrum/tandem-with-silicon solar cells (InGaN), RGB LEDs (InGaN), UV LEDs and lasers (AlGaN), and high-power diodes and transistors (AlGaN). However, many of these …
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Group III-nitride devices and applications
The group III-nitride system of materials has had considerable commercial success in recent years in the solid state lighting (SSL) and power electronics markets. The need for high efficient general lighting applications has driven research into InGaN based blue light emitting diodes (LEDs), and …
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Grafeno ant skandžio oksido fotolitografija /
… group. In this institute, heteroepitaxy of group III nitrides on sapphire, silicon carbide, oxides of rare earth elements and homoepitaxy on bulk GaN substrates is carried out. The goal of the project is to obtain a metal-dielectric-semiconductor junction by replacing the metal with graphene due …
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Measurement of Thermal Impedance of Deep Ultraviolet Light Emitting Diodes
… light emitting diodes (LEDs) based on group III-Nitrides have numerous potential applications in water and air purification, food sterilization, ultraviolet curing, chemical and biological sensors, and medical instrumentation. However, DUV LEDs, with peak emission wavelength between 250 and …
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Low Dislocation Density Gallium Nitride Templates and Their Device Applications
… excellent thermal stability, high μH × ns, of III-nitrides make them ideal candidates for both optoelectronic and high-speed electronic devices. In the past decades, great success has been achieved in commercialization of GaN based light emitting diodes (LEDs) and laser diodes (LDs). However, …
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Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique
Group III-nitrides semiconductors composed of gallium nitride (GaN), Indium nitride (InN), and aluminium nitride (AlN) had found use in broad technologies especially in optoelectronic and power devices. The main issues that limit the performance of GaN-based ultraviolet light-emitting diodes …
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Cubic phase gallium nitride photonics integrated on silicon(100) for next-generation solid state lighting
… for metalorganic chemical vapor deposition of III-nitrides, and space-based laser instruments for NASA missions is also discussed. Class lab module development and outreach activities are included.
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Characterisation of ScN and ScGaN alloys grown by Molecular Beam Epitaxy
The wurtzite III-nitrides AlN, GaN and InN are currently widely used in optoelectronic applications such as light-emitting diodes and this success is owed in large part to the possibility of band gap engineering by alloying between the constituent nitrides. Unfortunately, the restricted material …
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A study of efficiency droop of green light emitting diodes grown by metalorganic chemical vapor deposition
… the "efficiency droop" effect that occurs in III-Nitrides Light Emitting Diodes (LEDs) when driven at high injection current densities. The efficiency droop refers to a decrease of the LED light emission efficiency when increases the current density from low values ~10 A/cm2 to higher values …
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Structural Characterisation of Heteroepitaxial Zincblende Gallium Nitride
… LEDs. This is known as the ‘green gap’ problem. III-nitrides based on the zincblende crystal structure have the potential to bridge the ‘green gap’ due to the theoretically achievable absence of internal polarisation fields that plague the commonly used c-plane wurtzite crystal structure. In this …
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Graphene-Assisted gan membranes formation /
… of flexible membranes composed of group III nitrides.
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