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Showing 1 to 15 of 15 for “"III-nitride semiconductors"”.
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III-nitride Semiconductors Grown By Plasma Assisted Molecular Beam Epitaxy
III-nitride semiconductors are of great interest owing to their commercial and military applications due to their optoelectronic and mechanical properties. They have been synthesized successfully by many growth methods. Among them, molecular beam epitaxy (MBE) is a promising epitaxial growth method …
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OPTICAL CHARACTERIZATION OF WIDE ENERGY AGP GROUP III-NITRIDE SEMICONDUCTORS
… optical characterization of wide-band gap group III nitrides. Several optical spectroscopic techniques were applied to GaN and related materials grown by metalorganic chemical vapor deposition (MOCVD). Variable-temperature photoluminescence (PL) spectra were measured for a series of undoped GaN …
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Linear optical properties of III-nitride semiconductors between 3 and 30eV
… die linear optischen Eigenschaften von Gruppe-III-Nitrid Halbleitern zwischen 3 und 30eV gemessen sowie die strukturellen und elektronischen Hintergründe diskutiert. Untersucht werden dazu Galliumnitrid (GaN), Indiumnitrid (InN) und Aluminiumnitrid (AlN) sowohl in der stabilen hexagonalen …
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Steady State and Time-Resolved Cathodoluminescence Analysis of III-Nitride Semiconductors
… is used to investigate optical emission from semiconductors. The technique operates by exciting the sample with a focused electron beam such that it becomes excited and emits photons which are then analysed. The technique can be operated with a continuous electron beam but can also be utilised …
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A study of the elastic and electronic properties of III-nitride semiconductors
… of the elastic and electronic properties of III-N semiconductors is made. Particular attention is given to wurtzite quantum wells (QWs) based on the technologically important InxGa1_xN alloy system. An investigation of the effects of structural inhomogeneities in these systems is made; …
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A tight-binding analysis of the electronic properties of III-nitride semiconductors
This thesis divides into two distinct parts, both of which are underpinned by the tight-binding model. The first part covers our implementation of the tight-binding model in conjunction with the Berry phase theory of electronic polarisation to probe the atomistic origins of spontaneous polarisation …
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Overcoming Longstanding Synthesis Challenges Toward Realizing the Full Device Potential of III-Nitride Semiconductors
III-nitrides have the potential to address a large number of fundamental needs for semiconductor device applications, including full-spectrum/tandem-with-silicon solar cells (InGaN), RGB LEDs (InGaN), UV LEDs and lasers (AlGaN), and high-power diodes and transistors (AlGaN). However, many of these …
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III-nitride nanowire light-emitting diodes: design and characterization
III-nitride semiconductors have been intensively studied for optoelectronic devices, due to the superb advantages offered by this materials system. The direct energy bandgap III-nitride semiconductors can absorb or emit light efficiently over a broad spectrum, ranging from 0.65 eV (InN) to 6.4 eV …
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Structural and Morphological Analyses of Aln and Algan Layers
<p>III-nitride semiconductors based Deep UV LEDs are the prospective candidates to replace the traditional UV sources, such as mercury vapor lamps, used in the applications of water and air purification, germicidal and biomedical instrumentation systems and others. Due to the lack of native …
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Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication
… energy by the means of photovoltaic cells. III-nitride alloys show promise for these applications due to their generally good transport properties and ability to withstand high power applications. Along with these, this family of semiconductor alloys has a direct bandgap energy range …
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Ion-beam processes in group-III nitrides
Group-III-nitride semiconductors (GaN, InGaN, and AlGaN) are important for the fabrication of a range of optoelectronic devices (such as blue-green light emitting diodes, laser diodes, and UV detectors) as well as devices for high-temperature/high-power electronics. In the fabrication of these …
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Ion-beam processes in group-III nitrides
Group-III-nitride semiconductors (GaN, InGaN, and AlGaN) are important for the fabrication of a range of optoelectronic devices (such as blue-green light emitting diodes, laser diodes, and UV detectors) as well as devices for high-temperature/high-power electronics. In the fabrication of these …
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Vacuum Transistors Based on III-Nitrides Field Emitter Arrays with Self-Aligned Gate
… field emission device performance and stability, III-Nitride semiconductors are attracting significant attention recently thanks to their engineerable electron affinities and high bonding energies. Ideally, the degenerately-doped n-type semiconductors with low electron affinities can have low work …
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MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications
The study of III-nitride materials (InN, GaN and AlN) gained huge research momentum after breakthroughs in the production light emitting diodes (LEDs) and laser diodes (LDs) over the past two decades. Last year, the Nobel Prize in Physics was awarded jointly to Isamu Akasaki, Hiroshi Amano and …
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Diamond seeding process for the heterogenous integration of high quality diamond on semiconductors
… thermal properties of diamond film on different semiconductors. The growth of high-quality diamond on silicon as well as III-Nitrides were achieved through a series of experiments and characterization in various steps of the process. The first and foremost experiments were conducted to improve …