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Showing 1 to 11 of 11 for “"III-nitride materials"”.
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Investigation on the Properties of Nanowire Structures and Hillocks of Group-III Nitride Materials
Group-III nitride materials are increasingly important, because of their semiconducting properties and bandgaps tuneable across a wide range from the infrared to ultraviolet. They are of particular interest for optoelectronic and power electronic applications. The studies on nitride materials are …
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Lattice Engineering of III-Nitride Heterostructures and Their Applications
<p>III-Nitride materials have recently become a promising candidate for superior applications over the current technologies. However, certain issues such as lack of native substrates, and high defect density have to be overcome for further development of III-Nitride technology. This work presents …
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Growth of Indium Nitride Quantum Dots by Molecular Beam Epitaxy
… determining ways to minimize energy consumption. III-nitride materials are of interest for optoelectronic and electronic device applications such as high efficiency solar cells, solid state lighting (LEDs), and blue laser (Blu-ray Technology) applications. The wide range of direct band gaps …
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Multi-Microscopy Characterisation of III-Nitride Devices and Materials
III-nitride optoelectronic devices have become ubiquitous due to their ability to emit light efficiently in the blue and green spectral ranges. Specifically, III-nitride light emitting diodes (LEDs) have become widespread due to their high brightness and efficiency. However, III-nitride devices …
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MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications
The study of III-nitride materials (InN, GaN and AlN) gained huge research momentum after breakthroughs in the production light emitting diodes (LEDs) and laser diodes (LDs) over the past two decades. Last year, the Nobel Prize in Physics was awarded jointly to Isamu Akasaki, Hiroshi Amano and …
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Dynamical models for novel diffraction techniques in SEM
… nanocharacterisation tool for a variety of materials including semiconductors and metals. Less known for its diffraction abilities than its transmission counterpart, scanning electron microscopy (SEM)can be used in a number of diffraction modalities to provide information on crystal …
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III-nitride Semiconductors Grown By Plasma Assisted Molecular Beam Epitaxy
III-nitride semiconductors are of great interest owing to their commercial and military applications due to their optoelectronic and mechanical properties. They have been synthesized successfully by many growth methods. Among them, molecular beam epitaxy (MBE) is a promising epitaxial growth method …
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Wide-Bandgap III-Nitride Tunnel Junctions and Novel Approaches towards Improving Optoelectronic Devices
A combination of novel techniques, materials, and devices are explored to enhance III-nitride optoelectronics from the infrared to the deep ultraviolet wavelengths. Low-bandgap, high indium content III-nitride materials are investigated for longer wavelength applications. High indium incorporation …
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Theory of carrier transport in III-Nitride based heterostructures
Wurtzite III-nitride materials and their alloys have attracted significant interest for solid state lighting applications. This is due to the direct band gaps of InN, GaN, and AlN crystals, which span a wide range of emission wavelengths. Due to the importance of these systems, the goal of …
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H-BN integration in III-nitride devices for green hydrogen applications
… focus is on integrating InGaN (Indium Gallium Nitride), GaN (Gallium Nitride), and h-BN (hexagonal Boron Nitride), which are promising materials for hydrogen production and storage applications thanks to their unique properties. InGaN, for example, offers a tunable band gap, high chemical …
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Reaction and transport processes in OMCVD : selective and group III-nitride growth
… (OMCVD) to fabricate thin films of the group III nitride materials (GaN, AIN, and InN), LEDs with lifetimes over 10,000 hours are now commercially available while rapid progress is being made towards a laser diode structure with a similar lifetime. These devices, coupled with the existing red, …