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Showing 1 to 20 of 73 for “"III-nitride"”.
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Group III-nitride devices and applications
The group III-nitride system of materials has had considerable commercial success in recent years in the solid state lighting (SSL) and power electronics markets. The need for high efficient general lighting applications has driven research into InGaN based blue light emitting diodes (LEDs), and …
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High-Performance Gateless Iii-Nitride Microwave Switches
… shifters, arrays etc. Recent advancements in III-nitride heterostructure field-effect transistors (HFET) have led to RF switches with outstandingly low loss and high power handling capability, ideal for numerous applications. However, relatively high ohmic contact resistivity, large OFF-state …
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Third Order Nonlinearity In III-Nitride Microwave Switches
… cell phone and satellite communications etc. III-Nitride Heterojunction Field Effect Transistor (HFET) microwave switches have demonstrated significant advantages over most other switch types including pin- diodes GaAs high electron mobility transistors (HEMT) and MEMS due to high breakdown, …
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Modification of III-Nitride Surface Properties for Biointerface Applications.
North Carolina State University Theses Materials Science and Engineering.
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III-nitride nanowire light-emitting diodes: design and characterization
III-nitride semiconductors have been intensively studied for optoelectronic devices, due to the superb advantages offered by this materials system. The direct energy bandgap III-nitride semiconductors can absorb or emit light efficiently over a broad spectrum, ranging from 0.65 eV (InN) to 6.4 eV …
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Lattice Engineering of III-Nitride Heterostructures and Their Applications
<p>III-Nitride materials have recently become a promising candidate for superior applications over the current technologies. However, certain issues such as lack of native substrates, and high defect density have to be overcome for further development of III-Nitride technology. This work presents …
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Top-down Cross-Section Controlled III-Nitride Nanowire Lasers
<p>III-nitride nanowire lasers have drawn significant attention as potential compact coherent light sources for a wide range of applications such as on-chip communication, optical sensing, and solid-state lighting. For practical applications, control over the lasing properties is needed. For …
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MULTISCALE MODELING OF III-NITRIDE CORE-SHELL SOLAR CELLS
… of recently reported nanostructured III-nitride core-shell MQW solar cells are governed by an intricate coupling of size-quantization, atomicity, and built-in structural and polarization fields. The core computational framework, as available in our in-house QuADS 3-D simulator, is …
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Kurzwellige Diodenlaser auf der Basis der Gruppe III-Nitride
… von Laserdioden auf der Basis der Gruppe III-Nitride mit einer Emissionswellenlänge um 405 nm und geätzten Spiegelfacetten untersucht. Insbesondere wurde auf Einflüsse eingegangen, die sich aus dem verwendeten Materialsystem und der Notwendigkeit des Wachstums auf Fremdsubstrat ergaben. …
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Theory of carrier transport in III-Nitride based heterostructures
Wurtzite III-nitride materials and their alloys have attracted significant interest for solid state lighting applications. This is due to the direct band gaps of InN, GaN, and AlN crystals, which span a wide range of emission wavelengths. Due to the importance of these systems, the goal of …
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Multi-Microscopy Characterisation of III-Nitride Devices and Materials
III-nitride optoelectronic devices have become ubiquitous due to their ability to emit light efficiently in the blue and green spectral ranges. Specifically, III-nitride light emitting diodes (LEDs) have become widespread due to their high brightness and efficiency. However, III-nitride devices …
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III-nitride Semiconductors Grown By Plasma Assisted Molecular Beam Epitaxy
III-nitride semiconductors are of great interest owing to their commercial and military applications due to their optoelectronic and mechanical properties. They have been synthesized successfully by many growth methods. Among them, molecular beam epitaxy (MBE) is a promising epitaxial growth method …
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OPTICAL CHARACTERIZATION OF WIDE ENERGY AGP GROUP III-NITRIDE SEMICONDUCTORS
… optical characterization of wide-band gap group III nitrides. Several optical spectroscopic techniques were applied to GaN and related materials grown by metalorganic chemical vapor deposition (MOCVD). Variable-temperature photoluminescence (PL) spectra were measured for a series of undoped GaN …
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Structural Characterization of III-Nitride Semiconductors: Defect Control and Strain Management.
North Carolina State University Theses Material Science & Engineering.
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Growth and characterisation of group-III nitride-based nanowires for devices
… into the mechanisms driving the growth of nitride nanowires by plasma-assisted molecular beam epitaxy (PA-MBE). The influence of the group-III and group-V flux as well as the substrate temperature Tsub has been studied leading to the conclusion that the III-V ratio determines the growth …
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Linear optical properties of III-nitride semiconductors between 3 and 30eV
… die linear optischen Eigenschaften von Gruppe-III-Nitrid Halbleitern zwischen 3 und 30eV gemessen sowie die strukturellen und elektronischen Hintergründe diskutiert. Untersucht werden dazu Galliumnitrid (GaN), Indiumnitrid (InN) und Aluminiumnitrid (AlN) sowohl in der stabilen hexagonalen …
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H-BN integration in III-nitride devices for green hydrogen applications
… focus is on integrating InGaN (Indium Gallium Nitride), GaN (Gallium Nitride), and h-BN (hexagonal Boron Nitride), which are promising materials for hydrogen production and storage applications thanks to their unique properties. InGaN, for example, offers a tunable band gap, high chemical …
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Steady State and Time-Resolved Cathodoluminescence Analysis of III-Nitride Semiconductors
… are used to investigate the properties of III-nitride semiconductors. The instigation is split into three main research topics which will now be summarised. Firstly, cathodoluminescence will be applied to the investigation of InGaN/GaN core-shell nanorods for the purposes of light emission …
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Development of Iii-Nitride Non-Polar Leds and Self-Aligned Laser Structure
… been made to improve the overall efficiency of III-N LED devices by controlling the process parameters which are used to fabricate the device and the device design. More specifically we have targeted deep ultraviolet (DUV) LEDs and blue-green light emitting diodes. The epilayer structures for …
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A tight-binding analysis of the electronic properties of III-nitride semiconductors
This thesis divides into two distinct parts, both of which are underpinned by the tight-binding model. The first part covers our implementation of the tight-binding model in conjunction with the Berry phase theory of electronic polarisation to probe the atomistic origins of spontaneous polarisation …
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