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Showing 1 to 9 of 9 for “"III-V solar cells"”.

  1. Design and growth of wide-bandgap III-V solar cells on silicon by molecular beam epitaxy

    Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2025-03-28 without embargo terms

    uiuc Repository record for Design and growth of wide-bandgap III-V solar cells on silicon by molecular beam epitaxy (opens in a new tab)

  2. Ultra-thin III-V photovoltaic technology for space applications

    … efficiency and resilience to space radiation, III-V semiconductor material-based PV technology is the leading choice for power generation in space applications. However, III-V solar cells are still limited by high material and manufacturing costs, which are further pronounced by the recent …

    cambridge Repository record for Ultra-thin III-V photovoltaic technology for space applications (opens in a new tab)

  3. Design of III-V Multijunction Solar Cells on Silicon Substrate

    … globe, achieving high efficiency and low cost solar cells have long been the key objective for photovoltaic researchers. III-V compound semiconductor based multijunction solar cells have been the dominant choice for space power due to their superior performance compared to any other existing …

    vt Repository record for Design of III-V Multijunction Solar Cells on Silicon Substrate (opens in a new tab)

  4. Heterogeneous Integration of III-V Multijunction Solar Cells on Si Substrate: Cell Design and Modeling, Epitaxial Growth and Fabrication

    Achieving high efficiency solar cells and concurrently driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of ~25%, …

    vt Repository record for Heterogeneous Integration of III-V Multijunction Solar Cells on Si Substrate: Cell Design and Modeling, Epitaxial Growth and Fabrication (opens in a new tab)

  5. Germanium-on-silicon virtual substrate for lateral multijunction photovoltaics

    Lateral multijunction photovoltaics based on III-V direct band gap semiconductors enable efficient energy conversion. However, lattice matching between cell and substrate requires the use of expensive Ge or III-V substrates, which limits widespread application of III-V solar cells. Cost reduction …

    mit Repository record for Germanium-on-silicon virtual substrate for lateral multijunction photovoltaics (opens in a new tab)

  6. Heteroepitaxial Germanium-on-Silicon Thin-Films for Electronic and Photovoltaic Applications

    Developing high efficiency solar cells for lower manufacturing costs has been a key objective for photovoltaic researchers to drive down the levelized cost of energy for solar power. In this pursuit, III-V compound semiconductor based solar cells have steadily shown performance improvement at …

    vt Repository record for Heteroepitaxial Germanium-on-Silicon Thin-Films for Electronic and Photovoltaic Applications (opens in a new tab)

  7. Modeling of Bragg reflectors to increase performance of high efficiency III-V multijunction solar cells

    High efficiency III-V solar cells are important for solar concentrator systems and space applications. To increase the efficiency of these cells, creative methods have been employed such as adding quantum wells in stress-balanced superlatticies to get closer to the ideal bandgaps for three junction …

    colo-mines Repository record for Modeling of Bragg reflectors to increase performance of high efficiency III-V multijunction solar cells (opens in a new tab)

  8. Assembly and light management of solar microcells for concentration photovoltaics

    Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2020-08-01

    uiuc Repository record for Assembly and light management of solar microcells for concentration photovoltaics (opens in a new tab)

  9. Germanium on silicon heteroepitaxy for high efficiency photovoltaic devices

    Optoelectronic devices based on III-V direct gap semiconductors enable efficient energy conversion for photovoltaic cells, light emission for LEDs, and on-chip communication via various microphotonic components. However, widespread adoption of III-V solar cells is limited by the expensive Germanium …

    mit Repository record for Germanium on silicon heteroepitaxy for high efficiency photovoltaic devices (opens in a new tab)