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Showing 1 to 20 of 74 for “"III-V semiconductors"”.
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Optical properties of III-V semiconductors
A GaAs-Al$\sb{0.22}$Ga$\sb{0.78}$As heterostructure was prepared and used as a multimode optical waveguide in order to measure the sub bandgap energy- and temperature-dependent refractive index of GaAs. Propagation constants for the individual modes were measured by exciting one mode at a time …
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Dispersive phonon imaging in III-V semiconductors
"Low-temperature transport properties of high-frequency acoustic phonons are investigated in GaAs, InSb, InP and InAs using the phonon-imaging technique. In this method, a focused laser beam provides a movable heat source on one side of a cooled crystal (~ 2 K). A single small phonon detector on …
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Scanning tunneling microscopy of III-V semiconductors
Scanning tunneling microscopy (STM) has been used to study the (100) surface of GaAs and the (110) plane of cross-sectioned GaAs/AlGaAs heterolayers. Observation of the GaAs(100) surface with STM has characterized the c(8x2) reconstruction and shows that the c(8x2) consists of ordered (4x2) …
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MOCVD growth and doping studies of III/V semiconductors
Contains fulltext : mmubn000001_160060796.pdf (Publisher’s version ) (Open Access)
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Development of graphene growth surfaces for III-V semiconductors
… extra efficient and multifunctional devices. III-V semiconductor materials are an integral part of these devices due to their superior optical properties and electron mobilities as compared to silicon. However, the use of III-V semiconductor materials is currently reserved for high …
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THz transmission and resistively detected resonances in III-V semiconductors
Contains fulltext : 312677.pdf (Publisher’s version ) (Open Access)
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Heterostructurally Integrated Iii-V Semiconductors Fabricated by Wafer Bonding Technology
Finally, the feasibility of using the combination of low-temperature grown amorphous alpha-(Ga, As) materials and wafer-bonding technology to fabricate GaSb semiconductor on GaAs substrates to potentially create GaSb-on-insulator structure has been demonstrated.
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High frequency phonon propagation and detection in III-V semiconductors
… nonequilibrium phonons on excitons in epitaxial semiconductors. The propagation of high frequency phonons through crystals at low temperatures is characterized by both ballistic and diffuse processes. Ballistic propagation of heat pulses is highly anisotropic due to phonon focusing. Experimental …
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High-frequency phonon propagation and detection in III-V semiconductors
… nonequilibrium phonons on excitons in epitaxial semiconductors.
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Elementary processes in alkane-based reactive ion etching of III-V semiconductors
… has been developed for the etching of compound semiconductors. However, due to the complex nature of the plasma environment, relatively little is known about the etching mechanisms involved. To gain some understanding of the elementary processes involved in this technology, the interactions of …
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Effect of Nanoscale Defects on Electrical and Optical Properties in Iii-V Semiconductors
The Schrodinger equation, in a real space k·p Hamiltonian formation, is solved using the finite element method to study effects of edge and screw dislocations on optical properties in GaN. Energy levels and corresponding wave functions are obtained for the conduction and valence bands, and …
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Metal-assisted chemical etching of III-V semiconductors for advanced optoelectronic device fabrication
… One of the most novel techniques for etching semiconductors is metal-assisted chemical etching (MacEtch), a plasma-free wet etching method that utilizes a metal catalyst in order to enhance directional etching of a semiconductor. MacEtch has found its place in etching a wide variety of …
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Substrate engineering for monolithic integration of III-V semiconductors with Si CMOS technology
… on Si substrates, but monolithic integration of III-V semiconductors with Si CMOS using this platform is hampered by the large thickness of the Si1-xGex graded region. To address this issue, the Silicon on Lattice-engineered Silicon (SOLES) was developed, consisting of a silicon-on-insulator …
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Development of Monte-Carlo simulations for III-V semiconductors employing an analytic band-structure
The thesis is primarily concerned with the III-V-N semiconductors Gallium Nitride (GaN) and the dilute nitride Gallium Nitrogen Arsenide (GaNAs) and the effect that the band structure has on electron transport in these materials. Ensemble Monte-Carlo algorithms are developed in order to determine …
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Metalorganic chemical vapor deposition, ion beam mixing, and selective epitaxy of III-V semiconductors
… versatile growth technique commonly used to grow III-V compound semiconductor materials. A review of many seminal studies investigating the growth mechanisms of GaAs epitaxial growth is presented. Carbon is an intrinsic impurity in GaAs and AlGaAs grown by MOCVD and a number of growth variables …
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Spectroscopic characterization of dry etch-induced modification in III-V semiconductors and semiconductor heterostructures
… on the structural and electrical properties of III-V semiconductors and semiconductor heterostructures were studied using vibrational and electronic Raman spectroscopy and low and room temperature photoluminescence spectroscopy. The frequency, intensity, and lineshape of the dipole-allowed and …
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Spectroscopic characterization of the near-surface electronic structure of surface-modified III-V semiconductors
Investigations of the near-surface electronic structure of n$\sp+$-GaAs and n$\sp+$-InAs are presented. Recent studies of the GaAs surface have been carried out which demonstrate that the surface states which arise from termination of the crystal lattice, which are known to cause pinning of the …
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Native Oxides on Aluminum-Bearing Iii-V Semiconductors With Applications to High-Performance Laser Diodes
… experiments, water vapor oxidation of Al-bearing III-V semiconductors is employed to form high quality native oxides. The oxides are examined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). The effect of the semiconductor composition and conductivity type …
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Selective oxidation of aluminum bearing III-V semiconductors with applications to quantum well heterostructure lasers
… oxidizing layer. The higher aluminum composition semiconductors oxidize more readily.
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Native Oxides on Aluminum-Bearing Iii-V Semiconductors: Material Characterization and Application to Quantum Well Heterostructure Lasers
Data are presented on the comparison of the chemical stability of oxides of AlAs-GaAs heterostructures formed via atmospheric hydrolysis and by native oxidation at 400$\sp\circ$C for 3 h in a N$\sb2$ + H$\sb2$O vapor. Data indicate that atmospheric hydrolysis involves a chemical reaction that is …
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