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Showing 1 to 4 of 4 for “"III-V semiconductor alloys"”.
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Tunneling in the Iii-v Semiconductor Alloys Indium Gallium Phosphide, Gallium Aluminum Arsenide, and Gallium Arsenide Phosphide
Made available in DSpace on 2014-12-10T19:06:52Z (GMT). No. of bitstreams: 1 7212254.pdf: 3159809 bytes, checksum: 3806fd4032e22d4e943204391b117cec (MD5) Previous issue date: 1971
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Properties of the Nitrogen Isoelectronic Trap in the III-V Semiconductor Alloys Gallium Arsenide Phosphide and Indium Gallium Phosphide
Submitted by Carly Hafner (chafner2@illinois.edu) on 2014-06-06T16:20:02Z No. of bitstreams: 1 1972_Scifres.pdf: 1983799 bytes, checksum: af0bafc6b6a5f1fddded6b4a13be36ac (MD5)
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Properties of the Nitrogen Isoelectronic Trap in the Group-Iii-v Semiconductor Alloys Gallium-Arsenide-Phosphide and Indium-Gallium-Phosphide
Made available in DSpace on 2014-12-10T19:07:05Z (GMT). No. of bitstreams: 1 7310045.pdf: 3083676 bytes, checksum: de2e080db9dfaaaaf257ff7b657b551c (MD5) Previous issue date: 1972
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Electronic and optical properties of semiconductor alloys and superlattices
Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-02T18:04:23Z No. of bitstreams: 1 1986_ting.pdf: 8054944 bytes, checksum: c0ebc579813f805c94d27b704d6370c4 (MD5)