Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 8 of 8 for “"III-V nanowires"”.
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Passivation of III–V Nanowires Using Dielectrics Deposited by Atomic Layer Deposition
III–V semiconductor nanowires have many uses in (opto)electronic applications including infrared photodetectors and photovoltaic cells [1], tunnelling field-effect transistors (TFETs) [2] and high-frequency transistors [ 3]. Indium arsenide (InAs) is of interest as it has a direct narrow band gap …
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Selective area epitaxy of III-V nanowires: toward nanowire-on-silicon tandem solar cells
Nanowires grown via the selective area epitaxy technique (SAE-NWs) are of great research interest for use in next-generation electronic and electro-optic devices. As compared to other nanowire growth techniques commonly studied, SAE-NW is a highly controllable process due to the use of a …
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Novel nanomanufacturing methods for bottom-up III-V nanowires and van der Waals epitaxy of monolayer MoS2
Nano materials such as nanowires and 2-dimensional (2-D) molybdenum disulfide (MoS2) have received tremendous attention over the past few decades. Numerous applications have been proposed such as nanowire MOSFETs, nanowire electrical generators, nanowire biosensors, nanowire single photon …
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Growth and application of planar III-V semiconductor nanowires grown with MOCVD
… optical, electrical, and mechanical properties. III-V nanowires in particular are useful because of their direct bandgap, high carrier mobility, and ability to form heterojunctions and have been used to make devices such as light-emitting diodes, lasers, and field-effect transistors. However, …
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Flexible and substrate-free optoelectronic devices based on III-V semiconductor nanowires
III-V nanowires have been the subject of intense research interest for the past 20 years, as their unique optical and electronic properties, which arise from their nanoscale dimensions and composition, make them particularly suited for high-performance opto-electronic devices. Since epitaxial …
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Integrated optical components for quantum key distribution
… part, site-controlled growth of semiconductor III-V nanowires on Si for photodetection applications is achieved by fabricating the sites using electron-beam lithography and wet etching. Studies were also carried out to investigate the effect of the wafer’s growth temperature on the nanowire …
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Selective lateral nano-epitaxy for manufacturable nanowire electronics
… study on vapor-liquid-solid (VLS) growth of III-V planar nanowires and their electronic device applications. III-V materials, especially high-In-content InGaAs, are considered as a very promising n-channel material candidate for post-Si complementary metal-oxide-semiconductor (CMOS) …
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Structure/processing relationships in vapor-liquid-solid nanowire epitaxy
The synthesis of Si and III-V nanowires using the vapor-liquid-solid (VLS) growth mechanism and low-cost Si substrates was investigated. The VLS mechanism allows fabrication of heterostructures which are not readily attainable using traditional thin-film metalorganic chemical vapor deposition …