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Showing 1 to 20 of 47 for “"III-V materials"”.
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Laser Annealing and Dopant Activation in III-V Materials
… implement non-traditional device structures and materials into computer chips. Compound semiconductors are strong candidates for materials to replace silicon based on their improved speed and efficiency with, importantly, lower power requirements. III-V materials, like InGaAs and InAs, are …
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Enhanced performance of optical sources in III-V materials using photonic crystals
… crystals to enhance the performance of several III-V optical sources. Emphasis is placed on the primary limitation of using photonic crystals for III-V optical sources: nonradiative recombination pathways introduced at the high dielectric contrast interfaces of the photonic crystal. Chapter 1 …
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Heterogeneous integration and characterization of III-V materials on silicon for active and passive photonic device arrays
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2023-12-01
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Fabrication and Characterization of Optoelectronics Devices Based on III-V Materials for Infrared Applications by Molecular Beam Epitaxy
Optoelectronic devices based on III-V materials operating in infrared wavelength range have been attracting intensive research effort due to their applications in optical communication, remote sensing, spectroscopy, and environmental monitoring. The novel semiconductor lasers and photodetectors …
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SiGe virtual substrate engineering for integration of III-V materials, microelectromechanical systems, and strained silicon MOSFETs with silicon
… Institute of Technology, Dept. of Materials Science and Engineering, 2001.
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An investigation into the use of group VI elements as dopants in III-V materials prepared by molecular beam epitaxy
An electrochemical cell Pt/Ag/AgI/Ag2X/Pt (X=S,Se) has been used as a highly controllable source of S2 or Se2 molecules for n-type doping of GaAs and Ga1As grown by Molecular Beam Epitaxy (MBE). This source produces a pure oeam ot chalcogen dimers at low temperature (200-300°C) and is simply …
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Impact ionization and high-field transport in semiconductors
… Monte Carlo algorithm for Si and several III-V materials. Furthermore, a new interpretation of hot carrier luminescence spectra is given which can explain important features of hot electron distribution functions in MOSFETs.
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Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications
… the adoption of alternate channel materials with low bandgap with superior transport properties will play a crucial role to improve the computation ability of the standard integrated circuit (IC). The requirement of high-mobility channel materials allows the industry to harness the …
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Design and fabrication of a light emitting diode using a two-dimensional photonic crystal
… of l 00 nm feature sizes in a GaAs-based materials system. The nanoscale feature sizes and various III-V materials employed present many fabrication challenges.
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Diffusion characterization of antimony-based type-II superlattices using electron beam induced current and time-resolved photoluminescence
… (T2SLs), primarily utilizing antimony-based III-V materials, have gained significant interest for their mid-wave or long-wave infrared (MWIR or LWIR) detection capabilities. Although T2SLs are predicted to have superior performance, when compared to the current state-of-the-art infrared …
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Selective lateral nano-epitaxy for manufacturable nanowire electronics
… study on vapor-liquid-solid (VLS) growth of III-V planar nanowires and their electronic device applications. III-V materials, especially high-In-content InGaAs, are considered as a very promising n-channel material candidate for post-Si complementary metal-oxide-semiconductor (CMOS) …
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Design and fabrication of field-effect III-V Schottky junction solar cells
… of single and multi-junction solar cells using III-V materials has been shown and proved. Schottky solar cells based on metal-(insulator)-semiconductor (M-I-S) structure have been designed and fabricated using various wide bandgap semiconductors, such as GaAs and …
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Development of X-ray lithography and nanofabrication techniques for III-V optical devices
… integrated optical devices in III-V materials. Work on this rich family of devices has largely been limited to numerical analysis because of the difficulties of their fabrication. The challenges of fabrication are addressed by dividing the problem along two lines: (1) …
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III-V optoelectronic devices in the BGaInAs material system
… we investigate the potential of direct-bandgap, III-V materials for lattice-matched absorbers and emitters on silicon. Leveraging the small lattice constant of the boron pnictides, BGaInAs can be grown lattice-matched or nearly lattice-matched to Si; however, the difficult growth mechanics of …
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Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
… mature fabrication processes are available for III-V materials. Interband photodetectors made from these compounds are only sensitive at shorter infrared wavelengths. In recent years, intersubband devices have been developed for longer wavelengths and quantum well infrared photodetectors are now …
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Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
… mature fabrication processes are available for III-V materials. Interband photodetectors made from these compounds are only sensitive at shorter infrared wavelengths. In recent years, intersubband devices have been developed for longer wavelengths and quantum well infrared photodetectors are now …
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MODELING QUANTUM AND COULOMB EFFECTS IN NANOSCALE ENHANCEMENT-MODE TRI-GATE III-V MOSFETs
… nanotubes, graphene, and other exotic channel materials give good reason to continue semiconductor device scaling using high-transport III-V (such as InGaAs and InAsSb) channel materials beyond the year 2020. Novel process techniques, such as ALD, layer transfer, high-k dielectrics, and metal …
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Molecular beam epitaxy of InAsP graded buffers: From mid-infrared quantum wells to InAs virtual substrates with low threading dislocation density
… monitoring, and thermal imaging. While III-V compound semiconductors enable compact, high-efficiency MIR optoelectronic devices, lattice matching constraints limit the wavelength coverage on industrially favorable III-V substrates. Metamorphic growth can be used to overcome the lattice …
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III-V compound semiconductor selective area epitaxy on silicon substrates
In electronics, the integration of III-V compound semiconductor materials and silicon is a way to solve the silicon feature size limit and power consumption problems given the high electron mobility that the III-V semiconductors have. Higher electron transport properties than silicon enable the …
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High-resolution transmission electron microscopy of III-V FinFETs
III-V materials have great potential for integration into future complementary metal-oxide-semiconductor technology due to their outstanding electron transport properties. InGaAs n-channel metal-oxide-semiconductor field-effect transistors have already demonstrated promising characteristics, and …
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