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Showing 1 to 11 of 11 for “"III-V material"”.
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The design and fabrication of an optical nanoelectromechanical switch based in a III-V material system
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001.
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Development of monolithic CMOS-compatible visible light emitting diode arrays on silicon
… with integrating Si-based CMOS ICs and III-V-material-based light-emitting devices are very exciting and such integration has been an active area of research and development for quite some time now. SiGe virtual substrate technology presents one way to integrate these materials. A more …
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MULTICOLOR INFRARED DETECTION USING STEP QUANTUM WELLS
… investigated in recent years. Due to the mature III-V material and processing technology, great progress has been made successfully for the fabrication of large scale quantum well infrared focal plane arrays (FPA). In the meantime, various kinds of quantum well structures with novel properties …
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Colloidal Semiconductor Nanocrystals: A Study of the Syntheses of and Capping Structures for CdSe
… cadmium-telluride or a number of other II-VI and III-V material combinations. The CdSe quantum dots emit visible light at a repeatable wavelength when excited by an ultraviolet source. The synthesis of colloidal quantum dot nanoparticles is usually an organo-metallic precursor, high temperature, …
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III-V compound semiconductor selective area epitaxy on silicon substrates
In electronics, the integration of III-V compound semiconductor materials and silicon is a way to solve the silicon feature size limit and power consumption problems given the high electron mobility that the III-V semiconductors have. Higher electron transport properties than silicon enable the …
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Lattice mismatched epitaxy of heterostructures for non-nitride green light emitting devices
… which integrate traditionally incompatible materials with the ultimate goal of achieving high brightness green to amber light emitting diodes (LEDs) and laser diodes (LDs). Unconventional compositions of aluminum indium gallium phosphide (AlInGaP), with lattice constants less than that of …
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Empirical correlation of minority carrier lifetime to detect density profile in germanium on silicon heteroepitaxy
… (NIR) photodetectors and integration with III-V films for multi-junction photovoltaics. However, challenges such as thermal expansion coefficient mismatch and lattice mismatch between Ge and Si often leads to a high density of defects which can propagate through any III-V material grown …
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Mid-Wave and Long-Wave Single Uni-polar Barrier Infrared Detectors Based on Antimonide Material Systems
… with regard to low operating temperature, material yield and processing difficulties. A newer material technology known as type-II indium arsenide/gallium antimonide strain-layered superlattice has received much attention for its potential superior performance from lower dark current, …
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Self-seeded II-V semiconductor nanowire growth by metal-organic chemical vapor deposition (MOCVD)
III-V semiconductor epitaxial nanowires have gained significant attention in recent years, as they showcase an opportunity to combine III-V material properties with a non-planar morphology. To date, semiconductor devices have been continuously engineered to realize optoelectronic devices with ever …
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Semiconductor quantum dots for mid-IR light emission
… layers, but also by control of the thickness and material composition of the spacing layers between submonolayer InAs de- positions. In this manner, we demonstrate the ability to shift the quantum dot ground state energy at 77K from 1.38 eV to 1.88 eV. The results pre- sented offer a potential …