Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 9 of 9 for “"III-V heterostructures"”.
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Cross-Sectional Scanning Tunneling Microscopy Investigations of Cleaved Iii-V Heterostructures
… the development and application of XSTM to III-V heterostructures. An ultra-high vacuum (UHV) system dedicated to XSTM has been specifically designed and constructed as part of this work. Reported for the first time are XSTM cross-sections of self-assembled InAs quantum dots, XSTM …
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Tensile-Strained Ge/III-V Heterostructures for Low-Power Nanoelectronic Devices
… innovations, such as binary group IV or ternary III-V compound semiconductors, and novel device architectures, such as the tunnel field-effect transistor (TFET), are projected to continue transistor miniaturization beyond the Si CMOS era. Unlike conventional MOSFET technology, TFETs operate on …
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Predictive simulation and design of III-V heterostructures for light emission and detection
Semiconductor heterostructures have been long established for a variety of applications, particularly in photonic devices such as light-emitting diodes (LEDs) and lasers, in addition to photodetectors and optical amplifiers. Predictive simulations are key to support the development of these …
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The effect of nucleation on the quality of MBE-ZnSe/III-V heterostructures
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Tensile-strained Germanium via III-V Heterostructures for Emerging Electronic and Photonic Applications
… germanium (ε-Ge), synthesized via III-V metamorphic buffer layers comprising InGaAs and InAlAs. The structural quality and carrier dynamics of such Ge epilayers is characterized with a comprehensive suite of advanced techniques, including transmission electron microscopy (TEM) for …
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Magnetically assisted statistical assembly of III-V heterostructures on silicon : initial process and technology development
This work is the initial investigation of magnetically assisted statistical assembly (MASA), a novel silicon I-v integration technique developed at M.I.T. Initially procedures for processing optoelectronic devices into magnetically sensitive 40 micron discs were performed and refined. Cobalt …
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Development of pick-and-place assembly techniques for monolithic optopill integration
… (RM³) has been under study to integrate III-V heterostructures in the form of optopills on silicon CMOS circuits. Implementation of this technology poses several challenges such as recess filling and optopill bonding to the CMOS circuits. Research focused on establishing assembly …
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Impact of uniaxial strain on P-channel 111-V quantum-well field effect transistors
… circuits, achieving a high-performance p-channel III-V transistor remains one of the grand challenges. The key problem is the low hole mobility in these materials. In this thesis, we investigate a solution to this problem by exploring uniaxial strain as a means to improve hole mobility in III-V …