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Showing 1 to 20 of 30 for “"III-V compound semiconductors"”.
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Growth and characterization of III-V compound semiconductors
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Hyperthermal molecular beam dry etching of III-V compound semiconductors
Includes bibliographical references (p. 181-186).
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Compliant Epitaxy of Iii-V Compound Semiconductors for Optoelectronic Device Applications
The second technique uses a novel approach: very-low temperature molecular beam epitaxy (VLT-MBE) which involves growth of amorphous and polycrystalline materials. Using GaP and laterally oxidized AlAs materials, substrate independent DBRs were fabricated at wavelengths in both the visible …
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High-purity epitaxial growth and characterization of III-V compound semiconductors
… of epitaxial indium gallium arsenide phosphide compound semiconductor films are described. Methods have been developed to improve the purity of both InP and GaAs and to better assess the crystalline homogeneity of the InGaAsP alloy system.
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Precise Characterization and Investigation of Laser Cooling in III-V Compound Semiconductors
… issues associated with laser cooling of III-V compound semiconductors, in particular GaAs double heterostructures (DHS), are theoretically and experimentally investigated. This research addresses the key concepts of external quantum efficiency (EQE) and parasitic background absorption in …
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Long wavelength infrared detectors utilizing multiple quantum wells in III-V compound semiconductors
Data are presented on various infrared detectors based on multiple GaAs/AlGaAs quantum wells. Due to the great flexibility in the growth, dimensions, and composition of these structures, the electrical and optical characteristics of the photodetector may be significantly altered. This investigation …
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Photoluminescence studies of hydrogenation and other defect-related processes in III-V compound semiconductors
… processes in high-purity GaAs and related III-V compounds, are reported. A new effect of light-induced reactivation (LIR) or acceptors in p-type hydrogenated GaAs has been observed. This process is virtually athermal for weakly passivated acceptors such as Mg. Reactivation is persistent at …
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Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to small-volume quantum well heterostructure lasers
… work, the water-vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate small-volume semiconductor light-emitting devices. The oxidized material, native to the crystal, is mechanically and chemically stable. In addition, it is electrically insulating and has a low …
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Design and fabrication of one-dimensional and two-dimensional photonic bandgap devices
… devices have been designed and fabricated using III-V compound semiconductors. The one-dimensional photonic bandgap devices consist of monorail and air-bridge waveguide microcavities, while the two-dimensional photonic bandgap devices consist of light-emitting devices with enhanced extraction …
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Thermal and photochemical vapor deposition of aluminum nitride and gallium nitride
Currently, the optical spectrum of the III-V compound semiconductors has been largely confined, with a few notable exceptions, to the visible red-orange to infrared portion of the electromagnetic spectrum ($\sim$650 nm to $\sim$1550 nm). The AlGaN material system may be able to extend this range to …
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Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices
… work, the water vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate light-emitting and electronic devices. High Al-composition heterostructure crystals such as Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As (x $\sbsp{\sim}{>}$ 0.5) are converted into a stable native oxide at …
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An enhancement/depletion process for III-V compound semiconductor heterostructure field-effect transistors and optoelectronic integrated circuits
… integrated circuits (OEICs) has focused on III-V compound semiconductors such as GaAs-based and InP-based materials because of their superior electronic properties over those of silicon. Recent advances in the fields of Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy …
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Antimonide-based III-V multigate transistors
… Si in future generations of nanoelectronics. III-V compound semiconductors, such as InGaAs and InGaSb are promising candidates as channel materials for MOSFETs as a result of their extraordinary transport properties. In the past few years, rapid growth in the research of InGaAs n-channel …
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Lattice mismatched compound semiconductors and devices on silicon
III-V compound semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and the degradation of IIIV MOSFET channel mobility remain two major challenges for …
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Advanced III-V / Si nano-scale transistors and contacts: Modeling and analysis
… transistors (MOSFETs) device performance. III-V compound semiconductors and multi-gate structures are being considered as promising candidates in the next CMOS technology. III-V and Si nano-scale transistors in different architectures are investigated (1) to compare the performance between …
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n-type silicon-germanium based terahertz quantum cascade lasers
… drugs and explosives. To date, all THz QCLs use III–V compound semiconductors, but silicon (Si)-based devices could offer significant benefits. The high thermal conductivity of Si may allow higher operating temperatures, removing the need for large and costly cryogenic coolers, and the non-polar …
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Characterization of Novel Pyroelectrics
… respect to the temperature of the doped bulk III-V compound semiconductors gallium nitride and aluminum nitride and thin films of doped hafnium oxide, as reliable data for these materials is still missing in the literature. Here, the nitride-based semiconductors show a comparable small p and …
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Tensile-Strained Ge/III-V Heterostructures for Low-Power Nanoelectronic Devices
… innovations, such as binary group IV or ternary III-V compound semiconductors, and novel device architectures, such as the tunnel field-effect transistor (TFET), are projected to continue transistor miniaturization beyond the Si CMOS era. Unlike conventional MOSFET technology, TFETs operate on …
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Characterization of process variability and robust optimization of analog circuits
… heterogeneous technologies such as SiGe and III-V compound semiconductors. However, as the operating frequency of CMOS circuits increases, it becomes more difficult to obtain sufficiently wide operating ranges for robust operation in essential analog building blocks such as voltage-controlled …
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III-V compound semiconductor integrated charge storage structures for dynamic and non-volatile memory elements.
… of dynamic and nonvolatile memories in III-V compound semiconductors. Currently, III-V semiconductor storage devices consist only of capacitors, where data is destroyed during reading and electrical erasure is difficult. In this work, four devices types were demonstrated that exhibit …
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