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Showing 1 to 20 of 65 for “"III-V compound"”.
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Growth and characterization of III-V compound semiconductors
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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III-V compound semiconductor selective area epitaxy on silicon substrates
In electronics, the integration of III-V compound semiconductor materials and silicon is a way to solve the silicon feature size limit and power consumption problems given the high electron mobility that the III-V semiconductors have. Higher electron transport properties than silicon enable the …
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Hyperthermal molecular beam dry etching of III-V compound semiconductors
Includes bibliographical references (p. 181-186).
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Compliant Epitaxy of Iii-V Compound Semiconductors for Optoelectronic Device Applications
The second technique uses a novel approach: very-low temperature molecular beam epitaxy (VLT-MBE) which involves growth of amorphous and polycrystalline materials. Using GaP and laterally oxidized AlAs materials, substrate independent DBRs were fabricated at wavelengths in both the visible …
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High-purity epitaxial growth and characterization of III-V compound semiconductors
… of epitaxial indium gallium arsenide phosphide compound semiconductor films are described. Methods have been developed to improve the purity of both InP and GaAs and to better assess the crystalline homogeneity of the InGaAsP alloy system.
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Characterization of reactive ion etching of III-V compound semiconductor materials
Reactive ion etching (RIE) of III-V compound semiconductor materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$\sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for …
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Precise Characterization and Investigation of Laser Cooling in III-V Compound Semiconductors
… issues associated with laser cooling of III-V compound semiconductors, in particular GaAs double heterostructures (DHS), are theoretically and experimentally investigated. This research addresses the key concepts of external quantum efficiency (EQE) and parasitic background absorption in …
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Characterization of III-V compound semiconductor heterostructures grown by metalorganic chemical vapor deposition
III-V compound semiconductor materials have had much attention because of their application to high speed electronic and optoelectronic devices. For achieving these purposes, it is required to produce high quality samples with uniform layer thickness, no defects, and abrupt interfaces. For this …
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Long wavelength infrared detectors utilizing multiple quantum wells in III-V compound semiconductors
Data are presented on various infrared detectors based on multiple GaAs/AlGaAs quantum wells. Due to the great flexibility in the growth, dimensions, and composition of these structures, the electrical and optical characteristics of the photodetector may be significantly altered. This investigation …
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Photoluminescence studies of hydrogenation and other defect-related processes in III-V compound semiconductors
… processes in high-purity GaAs and related III-V compounds, are reported. A new effect of light-induced reactivation (LIR) or acceptors in p-type hydrogenated GaAs has been observed. This process is virtually athermal for weakly passivated acceptors such as Mg. Reactivation is persistent at …
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Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition
Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of …
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Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2021-12-01
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III-V compound semiconductor integrated charge storage structures for dynamic and non-volatile memory elements.
… of dynamic and nonvolatile memories in III-V compound semiconductors. Currently, III-V semiconductor storage devices consist only of capacitors, where data is destroyed during reading and electrical erasure is difficult. In this work, four devices types were demonstrated that exhibit …
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Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection
There are considerable interests in the use of infrared (IR) photodetectors, in particular mid- and long-wavelength IR detection, for diverse scientific, civil, and military applications. Devices based on the InAs/GaSb or InAs/InAsSb strained-layer-superlattices (SLSs) have gained special attention …
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In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system
In situ deposition of high-k materials to passivate the GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods were applied in this research. The CVD aluminum nitride (AIN) was first …
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Chemical beam, gas-source molecular beam, and molecular beam epitaxial growth of III/V compound semiconductor materials
A new and unique high vacuum crystal growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular beam epitaxial growth chamber. After careful thermal cleaning of the new …
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An enhancement/depletion process for III-V compound semiconductor heterostructure field-effect transistors and optoelectronic integrated circuits
… integrated circuits (OEICs) has focused on III-V compound semiconductors such as GaAs-based and InP-based materials because of their superior electronic properties over those of silicon. Recent advances in the fields of Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy …
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The growth and characterization of III-V compound semiconductor materials by metalorganic chemical vapor deposition and laser photochemical vapor deposition
Despite the vast use of metalorganic chemical vapor deposition (MOCVD) for the growth of optical and electronic devices, it is a process for which the details of the reaction mechanisms are not well understood. Efforts aimed at gaining insight into growth-related matters will be described here and …
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Epitaxial Ge/Il-V Heterostructures : MOCVD growth, characterization, and applications
… investigated the physics and fabrication of Ge/III-V compound heterostructures, where the III-V compound material could serve as a tensile-strain-inducing template for subsequent Ge epitaxy. Through experimentation and the use of characterization techniques such as transmission electron …
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