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Showing 1 to 3 of 3 for “"II-VI compounds"”.

  1. Electronic band structures for normal and high pressure phases of II-VI compounds

    Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-16T14:51:46Z No. of bitstreams: 1 1982_boettger.pdf: 4204271 bytes, checksum: dee343abaff59524a746e9ec4a9a6855 (MD5)

    uiuc Repository record for Electronic band structures for normal and high pressure phases of II-VI compounds (opens in a new tab)

  2. Study of surface modifications for improved selected metal (II-VI) semiconductor based devices.

    … to the operation of all semiconductor devices. There are many competing theories of Schottky barrier formation but as yet no quantitative predictive model exists to adequately explain metal-semiconductor interfaces. The II-VI compound semiconductors CdTe, CdS and ZnSe have recently come …

    sheffield-hallam Repository record for Study of surface modifications for improved selected metal (II-VI) semiconductor based devices. (opens in a new tab)

  3. Shadow mask assisted heteroepitaxy of compound semiconductor nanostructures

    … predictions of the model regarding the growth of II-VI and III-V compounds have been tested experimentally and the dependence of the growth rates on the growth parameters has been verified. Moreover, it has been shown, that selected area epitaxy of II-VI and III-V compounds are governed by …

    wurz-thes Repository record for Shadow mask assisted heteroepitaxy of compound semiconductor nanostructures (opens in a new tab)