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Showing 1 to 14 of 14 for “"Hydrogen passivation"”.
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Carbon doping and hydrogen passivation in indium gallium arsenide and indium phosphide/indium gallium arsenide heterojunction bipolar transistors grown by metalorganic chemical vapor deposition
The development of carbon doping for producing stable p-type doping profiles in MOCVD-grown GaAs has made MOCVD the preferred technique for production of highly reliable GaAs-based HBT structures. In the InP/InGaAs materials system, however, inefficient C incorporation and amphoteric behavior have …
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Fabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodes
… at low cost. This technique, referred to as hydrogen passivation, involves exposing laser material to a low energy hydrogen plasma, causing hydrogen ions to bind to charged acceptor and donor atoms. Such binding compensates the electrical activity of these dopant atoms and thereby increases …
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Photovoltaic modeling and grain boundary recombination in poly-silicon
… deals with grain boundary (GB) recombination, passivation, and characterization. A simple GB model is developed, and an expression for the GB barrier height under illumination is derived by introducing a quasi Fermi-function. By using this model, the dependencies of the minority carrier …
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Minority carrier lifetimes in germanium on silicon heterostructures
… interface dominated the effective lifetime. Hydrogen passivation stability of Si and Ge surfaces in air were also characterized using electron-hole recombination lifetimes.
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Optical properties of size selected nanocrystallites in porous silicon
… while conventional porous films have incomplete hydrogen passivation and tend to be plagued with defects that compete with radiative channels, our ""ideal"" porous silicon samples are highly passivated and defect free. SEM micrographs showed that crystallite sizes in the ideal porous films are …
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Advanced materials, process, and designs for silicon photonic integration
… both TE and TM modes.For PECVD a-Si, we adapt hydrogen passivation to reduce dangling bond density.
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Alternative passivation for silicon (100), environmentally benign manufacturing, and cooperative strategy in semiconductor industry
… we have identified that the industrial standard, hydrogen passivation of silicon (H-Si) degrades rapidly when exposes to air. In this thesis, two new processing steps are added to make this methoxy passivation compatible to industrial practice. In addition, a preliminary gate oxide test …
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Low temperature magneto-photoluminescence characterization of high purity gallium arsenide and indium phosphide
… beam epitaxy is studied spectroscopically. The hydrogen passivation of C acceptors in high purity GaAs grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) 1s investigated using photoluminescence. Si acceptors ~n MBE GaAs are also found to be passivated by …
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The Impact of Atomic Hydrogen on the Properties of the Silicon/Silicon Dioxide Interface
In this thesis, the influence of atomic hydrogen on the surface passivation of Si and SiO2 interface was mainly investigated. The effect of corona charging, humidity, UV exposure and mineral acid on Si and SiO2 interface was compared to the effect of atomic hydrogen. The electrical properties of …
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The Impact of Atomic Hydrogen on the Properties of the Silicon/Silicon Dioxide Interface
In this thesis, the influence of atomic hydrogen on the surface passivation of Si and SiO2 interface was mainly investigated. The effect of corona charging, humidity, UV exposure and mineral acid on Si and SiO2 interface was compared to the effect of atomic hydrogen. The electrical properties of …
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Scanning tunneling microscopy and spectroscopy of wet chemically synthesized porous graphene nanoribbons on hydrogen passivated silicon (100)
… graphene nanoribbons (GNRs) exfoliated onto hydrogen passivated silicon H:Si(100) substrates using a dry contact transfer (DCT) method under ultrahigh-vacuum (UHV) conditions. The porous GNRs are characterized in UHV using scanning tunneling microscopy (STM) and scanning tunneling …
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Multi-scale mechanics of monolayer graphene membranes : elasticity, fracture, and mechanochemistry
… interaction depends strongly on the level of hydrogen passivation on the indenter tip. Simulations show that at intermediate levels of hydrogen saturation, the strain-shielding effect redistributes strain in the graphene so that experimentally-determined fracture loading can be supported …
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Scanning tunneling microscopy and spectroscopy of nanometer scale metallic features on silicon surfaces
Nanometer scale metals are of great interest due to their potential applications in the future of molecular/atomic scale devices. For example, nanometer scale metal contacts on semiconducting single-walled carbon nanotubes (SWNTs) can determine the transport performance of SWNT based field effect …