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Etching of Silicon, Silicon Nitride, and Atomic Layer Etching of Silicon Dioxide using Inductively Coupled Plasma Beams

Kaler, Sanbir S.University of Houston2017

… can be achieved by ion-assisted etching using hydrofluorocarbon gases, such as CH3F, often with addition of O2. Despite the importance of this process, studies of the basic plasma chemistry and plasma-surface interactions when using these gases are largely lacking. Furthermore, fabrication of …

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