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AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates

Wu, Mo2017

… key problems have been identified and solved. Hot phonon scattering is the bottleneck which limits the enhancement of electron velocity in the GaN 2DEG channel. It is found that the plasmon-phonon coupling is the mechanism for converting of hot phonons into high group velocity acoustic phonons. …

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