Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 6 of 6 for “"Hot Carrier Injection"”.
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Experimental Analysis on Aging of Integrated Circuits
… as negative bias temperature instability (NBTI), hot carrier injection (HCI), time dependent dielectric breakdown (TDDB), and electromigration (EM) are coming up as potential threats to superior performance in the field. All these reliability issues cause intermittent failures and finally cause …
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Physical and Electrical Properties of Hot -Carrier Degradation of Silicon *Mos Transistors Processed in Deuterium and Hydrogen
… annealing of MOS transistors to achieve hot-carrier lifetime improvement. Deuterium processing as a function of the process parameters such as temperature, time, and pressure for MOS transistors with one level and multilevels of metalization has been studied. Lifetime improvements of …
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Electrical characterization of fluorinated and oxynitrided gate-oxides
… of generation of oxide trapped charges during hot carrier injection stress are discussed. In this light, the quality of fluorinated and oxynitrided gate-oxides are discussed, in comparison with control oxides. The dissertation also discusses methods used to characterize the electrical …
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VALIDATION OF CIRCUIT TIMING BEHAVIOR IN THE PRESENCE OF DELAY DEFECTS AND NBTI AGING
… Negative Bias Temperature Instability (NBTI) and Hot carrier injection impact the threshold voltage of a transistor which, in turn, affect path delays. This necessitates selecting critical paths and formulating test methods that consider the above factors. An efficient method to select critical …
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Engineering the Synthesis and Properties of Two-Dimensional Colloidal Perovskite Nanoplatelets
… range of optoelectronic applications including photovoltaics, displays, photodetectors, and thermoelectrics. Their colloidal stability enables facile device fabrication by providing solution processability, and tunability of the bandgap with particle size opens up the opportunity to independently …
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A Study on Unintentional and Intentional Sources of Variability in Nanometer Scale Digital Circuits
… time are bias temperature instability (BTI) and hot carrier injection (HCI), both of which cause long-term degradations in transistor performance, and result in unintentional reliability issues in circuits. These effects are exacerbated as transistor sizes reduce, causing temporal delay …