Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 26 for “"Homojunction"”.
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Optical and minority carrier confinement in lead selenide homojunction lasers.
Thesis. 1975. Ph.D.--Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
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Process design, development and fabrication of InAs homojunction converter cells for microscale thermophotovoltaic application
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2001.
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Fabrication and optimization of N-Cu2O thin film using electrodeposition method for homojunction solar cell
… low cost and non-toxic to the environment. A homojunction Cu2O is said to provide high conversion efficiency for solar cell. However, as Cu2O is a natural p-type semiconductor, it is a challenge to make an n-type Cu2O. In this study, n-Cu2O was prepared by using electrochemical deposition. The …
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Organic p-i-n Homojunctions: Fundamentals and Applications
… organic donors and acceptors, we realize p-i-n homojunctions of several organic matrices: zinc-phthalocyanine, pentacene, and an iridium-complex TER004. We observe stable and reproducible diode characteristics, which can be described by the standard Shockley theory with an exception concerning …
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Modeling and Simulation of III-Nitride-Based Solar Cells using Nextnano®
… to calculate the performance of a simple p-n homojunction solar cell device analytically. Silicon was picked as the material for this comparison between the outputs of the two simulators as well as the results of the drift-diffusion equations because it is a well-known material in both …
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Bipolar thermoelectric devices
… treatment of thermoelectric effects. Both homojunction and heterojunction devices are considered, and particular attention is given to semiconductor laser diodes. The mechanisms that govern both internal heat exchange and heat transfer between a device and its environment are examined, …
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Fabrication of Cu2O based homostructure thin film using electrodeposition method
… due to lattice mismatch. Thus, a p-n Cu2O homojunction thin film had been introduced to acquire higher efficiency due to similar interface which can promote less defects between layers. In this experiment, both n and p-type Cu2O thin film was fabricated by using copper acetate based …
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Wide-Bandgap III-Nitride Tunnel Junctions and Novel Approaches towards Improving Optoelectronic Devices
… content III-nitride devices. Wide-bandgap GaN homojunction tunnel junctions are investigated to enhance shorter wavelength optoelectronics. Extreme n- and p-type doping is established with carrier concentrations above 1x1020 cm-3, which is essential to form tunnel junctions in such a wide …
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The design, analysis and characterization of high-performance heterostructure bipolar transistors
… in the bipolar transistor offers advantages over homojunction bipolar transistors in the ability to construct these bandgap differences such that carrier flow can be either impeded or assisted. At the emitter-base heterointerface, a wide bandgap emitter presents a barrier to injection from the …
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FUNCTIONAL THIN FILMS BY SPATIAL ATOMIC LAYER DEPOSITION FOR PHOTOVOLTAIC APPLICATIONS
… Finally, the application of these films in homojunction and heterojunction crystalline silicon wafer solar cells is also presented.
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Compact device modeling and millimeter-wave oscillator design for III-V HBT technology
… because current models are based on older homojunction bipolar technology. A physically scalable DHBT model, the UIUC SDD2, is developed specifically for DHBT technology and shown to outperform the often-used VBIC model in both individual device modeling and full circuit simulation. …
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DC and AC modeling of heterostructure bipolar transistors (HBTS)
Starting with a homojunction or graded heterojunction bipolar transistor, a complete model for the dc and ac performances of the device is developed based on the Ebers-Moll methodology. The formulation is modified to include the abrupt single HBT, by introducing the effects of the conduction band …
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N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP
… findings from the 1st and 2nd generation GaN homojunction tunnel diodes, contributing to the fabrication of MOS capacitors on p-type GaN (0001) substrate for interface quality studies. Lastly, recommendations for optimized device design are provided based on literature survey.
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Integrated Heteroepitaxial Photodetectors
… photodetector that incorporated an [formula] homojunction and was straightforward to fabricate, assuming successful epitaxy growths. The photodetector design promoted 30% light absorption after 20 𝜇m propagation into the detection region.
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Design, Fabrication and Characterization of a GaAs/InxGa1-xAs/GaAs Heterojunction Bipolar Transistor
… characterization apparatus, a conventional GaAs homojunction diode was fabricated and characterized, showing current rectification ratio of 109 between plus one volt and minus one volt. Because the PnP material for the optimal HBT design was not available, an Npn GaAs/InAs/InAs HBT structure was …
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Phase-Engineered Field-Effect Transistors Based on Two-Dimensional Transition Metal Dichalcogenides
… 2H and metallic 1T’ phases, lateral 2H/1T’ MoTe2 homojunctions can be synthesized in situ by flux-controlled phase engineering. In this dissertation, a comprehensive study combining detailed structural and electrical properties of in-situ-grown lateral MoTe2 homojunctions formed via the …
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Ultrafast spatiotemporal dynamics of photoexcitations in two-dimensional semiconductors
… observe the funnelling of excitons in a lateral homojunction. Finally we demonstrate the exfoliation down to the monolayer of two representative member of the group-IV monochalcogenides family.
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Scanning probe microscopy study of thin film solar cells
… CZTSe devices. Both the heterojunction and homojunction situations of the three solar cells were simulated using the PC1D software. The simulation results were compared with the experimental results to analyze the properties of the junction. The comparison results provided the possible …
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AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework
… 2D materials, we proposed vertical hetero- and homojunction TFETs based on multilayer black phosphorus (BP) and transition metal dichalcogenides (TMDCs), including MoS2. Also, we tested our ideas by numerical simulations employing the semiclassical density gradient quantum correction model. It …
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Polymer Light-Emitting Electrochemical Cells Enhanced with Bipolar Electrode Arrays: In Situ Doping and Formation of Multiple p-n Junctions
… a large, closed BPE array, we present bulk homojunction PLECs that exhibit vastly improved EL output from over a thousand highly emissive light-emitting junctions. The clear doping and light-emission patterns greatly improve our understanding of the fundamental operation processes of the …
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