Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 110 for “"High-k"”.
-
High-K MOSFETS with high mobility channels
… The first part investigates the integration of high-?? gate dielectrics HfO2 and HfAlO on high hole mobility compressive strained-SiGe (I?-SiGe) surface channel for pMOSFET. A high-??/I?-SiGe interfacial layer contains GeOx if the dielectrics are deposited on I?-SiGe directly, whereas the …
-
Characterization of high-k layers as the gate dielectric for MOSFETs
… device reliability. Alternative dielectrics with higher dielectric constant (high-k) than that of Si02 have been searched. High-k layers allow the use of physically thicker gate dielectrics, so that the gate leakage current is controlled. The intensive world-wide research has identified the …
-
Investigation Of High-k Gate Dielectrics And Metals For Mosfet Devices.
… and deposition techniques have made feasible high- k dielectric materials for MOS transistors. The continued scaling of CMOS devices is pushing the Si-SiO2 to its limit to consider high-k gate dielectrics. The demand for faster, low power, smaller, less expensive devices with good …
-
High-K Dielectrics in Metal Insulator Metal (MIM) Capacitors for RF Applications
… the RF and AMS applications have requirements of high capacitance densities and low quadratic voltage coefficients of capacitance (VCCs) and leakage currents. To address these conflicting requirements, MIM capacitors using stacked dielectrics of a high-k dielectric on SiO2 were proposed. The MIM …
-
Electrical characterization of high-k gate dielectrics for advanced CMOS gate stacks
… CMOS technology. As SiO_2 was replaced by the high-k dielectric to further equivalent oxide thickness (EOT), high mobility substrates like Ge have attracted increasing in replacing Si substrate to further enhance devices performance. Precise control of the interface between high-k and the …
-
An investigation of high-k materials in metal-insulator-metal capacitor structures
… achieve the required electrical properties of high electric field breakdown strength and minimal leakage current. The low k value of the current materials presents a challenge to development of many new technologies and the integration of high-k materials in MIM capacitor structures is vital to …
-
Hybrid-gate deep depletion mosfet high-k zro2/diamond-based power devices
… devices, making them durable and reliable in high power environments is the key to the efficient low-carbon electrical energy production and distribution for our future energy system, eliminating the auxiliary systems and reducing the losses. Despite silicon is a well-established material it …
-
Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
The need for high speed and density in the modem semiconductor industry requires new channel materials and techniques for improved carrier transport and continuous scaling of the device dimensions. As a material for enhanced hole transport strained-Ge is implemented in this work. High-k dielectric …
-
The Degradation and Time-dependent Breakdown of P-type Mosfets with a High-k Dielectric
In this study, the degradation and eventual breakdown of the gate stack due to trap generation in p-type metal-oxide-semiconductor devices comprised of SiO2/HfO2/TiN was investigated. Negative bias constant voltage stress was applied in conjunction with charge pumping, stress induced leakage …
-
Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors
… there is growing research interest in the use of high electron mobility channel materials, such as indium gallium arsenide (InGaAs), in conjunction with high dielectric constant (high-k) gate oxides, for Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) based devices. The motivation for …
-
In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system
In situ deposition of high-k materials to passivate the GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods were applied in this research. The CVD aluminum nitride (AIN) was first …
-
A study of high-K dielectric materials in conjunction with a multilayer thick-film system
A new family of dielectric materials has been studied, individually as thick-film capacitors and as buried components incorporated in second-order lowpass and bandpass RC active filter circuits. The materials were electrically characterized in terms of the variation of dielectric constant and …
-
Surface and interface characterisation of high-k dielectric materials on silicon and III-V semiconductor substrates
Interface formation between high-k dielectric oxide materials and semiconductor surfaces is of critical importance to the development of the next generation of high speed semiconductor devices. This thesis investigates the deposition and characterisation of a range of candidate high-k materials on …
-
Reliability study of Zr and Al incorporated hf based high-k dielectric deposited by advanced processing
Hafnium-based high-x dielectric materials have been successfully used in the industry as a key replacement for SiO_2 based gate dielectrics in order to continue CMOS device scaling to the 22-nm technology node. Further scaling according to the device roadmap requires the development of oxides with …
-
An investigation of border traps and interface states in high-k/InGaAs metal-oxide-semiconductor systems
… (MOSFETs) is to replace SiO2/Si structure with high dielectric constant (high-k) oxides on high mobility channel materials (e.g. InGaAs), which have the potential to achieve a comparable on current and operating frequency to silicon, but at a reduced supply voltage. In this thesis, investigation …
-
Petrogenesis of Mesoarchean high-K rocks in the Kaapvaal Craton: Investigating the Boesmanskop Alkaline Complex and Salisbury Kop batholith
… apatite, and titanite compositions reflect high-temperature crystallization from REE-rich felsic magmas, with Ti-in-zircon thermometry recording temperatures up to 915 °C. Additionally, the high K2O+Na2O, low MgO and CaO contents of all the rocks, the presence of inherited zircon cores, and …
-
Design, fabrication, and characterization of germanium MOSFETs with high-k gate dielectric stacks based on the nitride interfacial layers
… velocity, and consequently MOSFET performance, high mobility semiconductors are being explored as possible replacements for silicon. Germanium offers enhanced electron mobility and superior hole mobility at high inversion charge density; however, the formation of a high quality …
-
An investigation of the performance and stability of zinc oxide thin-film transistors and the role of high-k dielectrics.
… metrics, with effective channel mobilities as high as 30 cm2/V-1s-1, on-off current ratios of 107 and sub-threshold slopes of 0.9 – 3.2 V/dec. These were found to be dependent on film thickness (~15 – 60 nm) and the underlying dielectric (silicon dioxide (SiO2), gadolinium oxide (Gd2O3), …
Page 1 of 6