Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 31 for “"High-electron-mobility transistor (HEMT)"”.
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Two-Dimensional Simulation of the High Electron Mobility Transistor
The High Electron Mobility Transistor (HEMT), a recently developed electronic device which takes advantage of the excellent conduction properties of modulation-doped GaAa/AlGaAs semiconductors, has been shown to perform well for both high-speed digital and analog applications. Switching speeds on …
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Circuit Simulation Models for the High Electron Mobility Transistor
The high electron mobility transistor (HEMT) is one of the fastest switching devices available today. In order to best utilize its capabilities one must be able to simulate its behavior in electronic circuits. This requires an efficient and accurate mathematical model for both dc and ac analysis …
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Physics and Simulation of High-Speed Heterostructure Devices
… devices which have shown promise for both high-speed digital and microwave applications is examined. In particular, the following devices are studied in detail: high electron mobility transistor (HEMT), dual-channel high electron mobility transistor, velocity-modulation transistor, and …
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A two-dimensional numerical model of the high electron mobility transistor
A two-dimensional numerical model of the high electron mobility transistor (HEMT) with consideration of quantization in the channel is presented. In this model, the spatial spread of the electron concentration in the quantum well normal to the heterojunction is taken into consideration by solving …
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Development of Gallium Nitride-Based Power Electronic Devices Using Plasma-Assisted Molecular Beam Epitaxy
… study on the development of GaN-based power electronic devices. The hands-on research on GaN compound semiconductors includes thin film growth, material characterization, device fabrication, and device characterization using state-of-the-art semiconductor processing equipment and …
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Transport properties along the channel of a Hemt
In the theoretical modeling of a high electron mobility transistor (HEMT), it is inherently assumed that the variation of quantum confinement along the channel from the source to the drain is about the same and therefore, the transport properties are independent of position and only dependent on …
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Gallium Nitride-Based HEMT Devices Modeling and Performance Characterization
The AlGaN/GaN high electron mobility transistor (HEMT) is a promising candidate for microwave applications due to its high power and low noise characteristics at such frequencies. As a result of improved material growth and processing technologies, microwave power densities have been demonstrated …
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Design of a High Temperature GaN-Based Variable Gain Amplifier for Downhole Communications
… temperature often exceeds 210 °C. The need for high temperature operation, combined with the need for real-time data logging has created a growing demand for robust, high temperature RF electronics. This thesis presents the design of an intermediate frequency (IF) variable gain amplifier (VGA) …
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Design and Optimization of Multichip GaN Module Enabling Improved Switching Performance
… have become the ultimate choice for future high-performance power electronics energy conversion. GaN high electron mobility transistor (HEMT) offers very fast switching capability enabling the designer to push switching frequency to the MHz range. Traditional device packaging becomes a …
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Characterizing and modeling methods for power converters
… is becoming increasingly important in modern electronic devices, especially in applications with stringent requirements of its form factor. With the evolution of technology, the switching frequency in a power converter is pushed to a higher frequency range, e.g., several MHz or even higher, to …
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Development of InAlN HEMTs for space application
This thesis investigates the emerging InAlN high electron mobility transistor (HEMT) technology with respect to its application in the space industry. The manufacturing processes and device performance of InAlN HEMTs were compared to AlGaN HEMTs, also produced as part of this work. RF gain up to 4 …
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Array-based planar nanowire high electron mobility transistor
III-V semiconductor nanowire (NW) field-effect transistors (FETs) are strong candidates for future low-power digital/RF IC. Bottom-up grown NWs via the vapor-liquid-solid (VLS) mechanism are of particular interest for NW-FET application because the as-grown 3D NW structures require no lithography …
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Microscopic physics of transition edge sensors
… to ensure a good shielding factor as well as a high reflection coefficient, and repeat key measurements from my systematic study to show the reduction in field achieved using this prototype on-chip shield. TES readout typically uses Superconducting Quantum Interference Detectors (SQUIDs), …
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Surge-energy and Overvoltage Robustness of Cascode GaN Power Transistors
… dissipate surge energy via avalanche, the GaN high-electron-mobility transistor (HEMT) has no avalanche capability and withstands surge energy by its overvoltage capability. However, a comprehensive study into the surge-energy robustness of the cascode GaN HEMT, a composite device made of a GaN …
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Solid-state microwave amplification into millimetric frequencies
… technical problems associated with the design of high-frequency TRAP A IT circuits, which final led to the decline of the technology at frequencies beyond S-band. The second period covers 1980 to 1987 and describes in detail the authors' contribution in the development of a milli-metric GaAs …
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Class-F Power Amplifier with Maximized PAE
… because of their capability of outputting high power and providing good PAE. Class-F boosts up PAE by controlling the harmonic content at the output. Advanced Design System (ADS) from Agilent is used for design and simulation based on the ADS model of Cree’s CGH40010 high electron mobility …
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Characterization and Failure Mode Analysis of Cascode GaN HEMT
Recent emerging gallium nitride (GaN) high electron mobility transistor (HEMT) is expected to be a promising candidate for high frequency power conversion techniques. Due to the advantages of the material, the GaN HEMT has a better figure of merit (FOM) compared to the state-of-the-art silicon (Si) …
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Gate-geometry Dependence of Enhancement-mode p-GaN Gate High Electron Mobility Transistors
While GaN-based transistors for power electronics have in many situations demonstrated technological superiority over conventional Si based devices, the development of GaN power electronics has only scratched the surface of the possibilities that lie ahead. The most promising device structure for …
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MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications
… candidates in other areas, for example, the high frequency (RF) high electron mobility transistor (HEMT) and photovoltaics. These devices require the growth of high quality III-nitride films, which can be prepared using metal organic vapour phase epitaxy (MOVPE). The main aim of my thesis is …
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Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications
Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron …
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