Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 52 for “"High-breakdown"”.
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ULTRA-LOW K DIELECTRIC MATERIALS WITH HIGH BREAKDOWN STRENGTH AND EXCELLENT MECHANICAL PROPERTIES
… The permittivities were measured using LCR, breakdown with PolyK Polarisation Loop & Dielectric Breakdown Test System, and mechanical properties using strain-induced elastic buckling instability measurement for mechanical property measurements (SIEBIMM). The breakdown strength of nearly 3.2 …
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Real-time implementation of high breakdown point estimators in electric power systems via system decomposition
This dissertation presents a new, highly robust algorithm for electric power system state estimation. A graph theory-based system decomposition scheme is coupled with a high breakdown point estimator to allow reliable identification of multiple interacting bad data even in cases of conforming …
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Robust, location-free scale estimators for the linear regression and k-sample models
… generally been quite robust in terms of having a high breakdown point and can achieve a surprisingly high Gaussian efficiency. This idea has also been extended to the simple linear regression model, where typical estimators of the dispersion of the errors depend on an estimator of the regression …
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Cluster-Based Bounded Influence Regression
… ordinary least squares estimation while low-breakdown procedures such as M regression and bounded influence regression may be unable to combat a small percentage of outliers. A high-breakdown procedure such as least trimmed squares (LTS) regression can accommodate up to 50% of the data (in …
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Low filler volume concentration composite dielectrics
"One avenue for synthesizing a high energy density capacitor while circumventing the manufacturing problems and low breakdown strength associated with dense, sintered ceramics, is to incorporate low volume concentrations of well dispersed high permittivity filler, such as barium titanate, in …
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Profile Monitoring for Mixed Model Data
… sufficiently accurate for Phase II monitoring. High breakdown estimation methods based on the minimum volume ellipsoid (MVE) or the minimum covariance determinant (MCD) are well suited to detecting multivariate outliers in data. Because of the inherent difficulties in computation many algorithms …
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AlGaN/GaN-based power semiconductor switches
AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and charge density. The ability to grow these devices on large-diameter Si wafers …
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Modeling and simulations of diphasic composites for development of high energy density dielectrics
… is focused on diphasic dielectric composites for high energy density storage applications in pulsed power and power distribution systems. Composite materials are particularly attractive because they can synergistically combine high permittivity with high breakdown strength of the individual …
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Highly Robust and Efficient Estimators of Multivariate Location and Covariance with Applications to Array Processing and Financial Portfolio Optimization
… extends, to the complex-valued domain, the high-breakdown-point class of multivariate estimators called S-estimators. This dissertation defines S-estimators in the complex-valued context, and it defines their properties for complex-valued data. One major shortcoming of the leading …
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Alternativy nejmenších čtverců
… we give attention to next group of methods whit high breakdown point, which deal with signifi- cance of the individual observations (least weighted squares) and elimination of outlying obser- vations (least trimmed squares). The main purpose of this work is to describe and compare these models, …
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Modulation-Doped Field-Effect Transistors for High-Power Microwave Applications
… and sequential wet and dry selective etching. A high linearity of device characteristics is important to minimize intermodulation of high frequency signals under high-power operation. The linearity of device performance is investigated through the comparison of InGaAs/GaAs PHEMTs and doped …
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Development of high-performance front-illumination III-N avalanche photodiodes by metalorganic chemical vapor deposition
… band-gap energy of ~3.5 eV at 300K can exhibit a high sensitivity in the ultraviolet (UV). They are appropriate candidates for many applications because of their capability of operation in the near-UV and visible-blind spectral regions, high detection sensitivity, high breakdown electric field …
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High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications
… bipolar transistors (HBTs) are widely used in high-speed mixed-signal, radio frequency, and communication ICs because of their high speed, high breakdown voltage, and high efficiency capabilities compared with Si bipolar junction transistors (BJTs) and complementary metal-oxide semiconductor …
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Application of robust statistics to asset allocation models
… the market weights of all assets for the second. High breakdown affine equivariant robust methods are effective, but tend to be costly when cross-validation is required to determine regularization parameters.
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Thin Film Polymer Dielectrics for High-Voltage Applications under Severe Environments
… polymer dielectrics for the realization of high-power electronic circuits in a miniature form. These polymeric materials must satisfy a number of critical thermal, environmental, and electrical requirements to meet the required performance criteria for microelectronics applications. These …
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Junction Based Gallium Nitride Power Devices
… (GaN) is a wide bandgap semiconductor with high electron mobility and high critical electric field. GaN-based power devices promise superior device performance over the Si-based counterpart. The primary design target of a unipolar power device is to achieve low on-resistance and high …
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Growth and Characterization of (InGa)2O3 Alloys
… properties are conducive to improved power and high breakdown devices. The indium gallium oxide alloy makes it one of the candidates that can be used in heterostructures in which the electrical and optical properties can be tuned. While research has been concentrated on the development and …
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Investigation Of High-k Gate Dielectrics And Metals For Mosfet Devices.
… and deposition techniques have made feasible high- k dielectric materials for MOS transistors. The continued scaling of CMOS devices is pushing the Si-SiO2 to its limit to consider high-k gate dielectrics. The demand for faster, low power, smaller, less expensive devices with good …
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Comparative analysis of high input voltage and high voltage conversion ratio step-down converters equipped with silicon carbide and ultrafast silicon diodes
DC to DC step-down applications with high input voltage and high voltage conversion ratio operational requirements, such as photovoltaic battery chargers, are subject to high conduction losses, high switching losses and substantial reverse-recovery losses when minority carrier principle diodes are …
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AlGaN/GaN HFET with composite 'slow/fast' gate
… field effect transistors (HFET) include a record high-density two dimensional electron gas (2DEG) channel, high breakdown fields, temperature stability and chemical robustness. Radio Frequency (RF) switches based on such HFETs demonstrate very low insertion loss, high power handling capability and …
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