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Showing 1 to 1 of 1 for “"High-Temperature Reliability Testing"”.
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Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress
Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) are having increased applications in high-power and high-frequency conversion areas due to their superior switching speed, high breakdown voltage, and low conduction losses. Despite their advantages, GaN HEMTs are prone to performance …