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Showing 1 to 20 of 23 for “"High-K dielectrics"”.
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High-K Dielectrics in Metal Insulator Metal (MIM) Capacitors for RF Applications
… the RF and AMS applications have requirements of high capacitance densities and low quadratic voltage coefficients of capacitance (VCCs) and leakage currents. To address these conflicting requirements, MIM capacitors using stacked dielectrics of a high-k dielectric on SiO2 were proposed. The MIM …
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Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors
… there is growing research interest in the use of high electron mobility channel materials, such as indium gallium arsenide (InGaAs), in conjunction with high dielectric constant (high-k) gate oxides, for Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) based devices. The motivation for …
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In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system
In situ deposition of high-k materials to passivate the GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods were applied in this research. The CVD aluminum nitride (AIN) was first …
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An investigation of the performance and stability of zinc oxide thin-film transistors and the role of high-k dielectrics.
… metrics, with effective channel mobilities as high as 30 cm2/V-1s-1, on-off current ratios of 107 and sub-threshold slopes of 0.9 – 3.2 V/dec. These were found to be dependent on film thickness (~15 – 60 nm) and the underlying dielectric (silicon dioxide (SiO2), gadolinium oxide (Gd2O3), …
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Self-aligned AlGaN/GaN transistors for sub-mm wave applications
… done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source and drain access resistance. The eventual fabrication of self-aligned transistors required the …
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Dielectric materials by Atomic Layer Deposition for microelectronic applications
… and manufacturing techniques in order to achieve high performance and reliability. According to the miniaturization at the nanometric scale, the need of deposition methods with atomic level accuracy has become an important issue. In this perspective, the ALD is the most promising deposition …
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FABRICATION AND CHARACTERIZATION OF ACTIVE NANOSTRUCTURES
… characterized. Junctionless transistors based on highly-doped silicon nanowires fabricated using a bottom-up fabrication approach are first discussed. The fabrication avoids the ion implantation step since silicon nanowires are doped in-situ during growth. Germanium junctionless transistors …
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Design, fabrication, and characterization of germanium MOSFETs with high-k gate dielectric stacks based on the nitride interfacial layers
… velocity, and consequently MOSFET performance, high mobility semiconductors are being explored as possible replacements for silicon. Germanium offers enhanced electron mobility and superior hole mobility at high inversion charge density; however, the formation of a high quality …
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Atomic vapor depositions of metal insulator metal capacitors : investigation, development and integration
Metall-Isolator-Metall (MIM) Kondensatoren gehören zu den wichtigsten passiven Komponenten in Hochfrequenzbauelementen und Schaltkreisen für Analog/Mischsignale. Unabhängig von der Anwendung beanspruchen MIM-Kondensatoren bis zu 50 % der Chipfläche. Dies unterstützt maßgeblich die Chipfläche zu …
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MEMS Hybrid Electronic Integration: From Micro-Robotic Actuation to Control and Monitoring of MEMS Sensor
… systems. The first investigated the use of high-permittivity (high-k) dielectrics to strengthen electrode fields and potentially reduce operating voltages for FP MicroStressBots. The second explored the fabrication of electrostatic devices by sputter-coating 2PP 3D-printed structures with …
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On the Impact and Growth of Plasma-enhanced Atomic Layer Deposition High- Dielectrics on 2D Crystals
… challenge for establishing ultrathin, high-quality dielectrics to 2D materials. Since ultrathin dielectrics are an essential aspect of future 2D FETs, this challenge has been a persistent bottleneck for the field. </p><p>In this work, the use of plasma-enhanced atomic layer deposition …
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DESIGN AND FABRICATION OF METAL-POLYMER BASED CORE-SHELL ARTIFICIAL NANODIELECTRICS FOR CAPACITOR APPLICATIONS
The need for high storage capacitors led to the development of polymer based capacitors. The permittivity of the polymer as well as its dielectric strength can be tuned to desired characteristics by introducing either ceramic or metal nano fillers. Usage of ceramic fillers would need higher …
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Design and optimization of ultrathin silicon field effect transistor's for sensitive, electronic-based detection of biological analytes
… structure, require the use of no labels, and are highly sensitive to the binding of molecules to their surfaces. This is due to the large surface area to volume ratio afforded to nanowires. Moreover, arrays of silicon nanowires have demonstrated multiplexed, label-free sensing of cancer markers …
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LATERAL POWER DEVICES AND TECHNOLOGIES FOR HIGH VOLTAGE INTEGRATED CIRCUITS
The prime objective of a High Voltage Power Integrated Circuit (HVPIC) is to integrate high power and low power devices on the same wafer. Such a Power Integrated Circuit (PIC) benefits in cost, weight, functionality and reliability. A Lateral MOS controlled Power Device is a key component in such …
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Electrical characterization of high-k gate dielectrics for advanced CMOS gate stacks
… CMOS technology. As SiO_2 was replaced by the high-k dielectric to further equivalent oxide thickness (EOT), high mobility substrates like Ge have attracted increasing in replacing Si substrate to further enhance devices performance. Precise control of the interface between high-k and the …
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High-K MOSFETS with high mobility channels
… The first part investigates the integration of high-?? gate dielectrics HfO2 and HfAlO on high hole mobility compressive strained-SiGe (I?-SiGe) surface channel for pMOSFET. A high-??/I?-SiGe interfacial layer contains GeOx if the dielectrics are deposited on I?-SiGe directly, whereas the …
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Characterization of negative bias temperature instability and lifetime prediction for pMOSFETs
In order to achieve high speed and packing density, the size of the transistor has shrunk aggressively. The gate dielectric, as the most critical component in the transistor, is undergoing rapid and substantial changes with the adoption of ultra-thin plasma nitrided oxide and more recently high-k …
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MODELING QUANTUM AND COULOMB EFFECTS IN NANOSCALE ENHANCEMENT-MODE TRI-GATE III-V MOSFETs
… to continue semiconductor device scaling using high-transport III-V (such as InGaAs and InAsSb) channel materials beyond the year 2020. Novel process techniques, such as ALD, layer transfer, high-k dielectrics, and metal gates are now being used to explore these MOSFETs. III-V materials are also …
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Process Dependence of Defects and Dopants in Wide Band Gap Semiconductor and Oxides
… in wide band gap semiconductors and oxides of high-k dielectrics, ZnO and MoS<sub>2 </sub>.</p><p>Ultrahigh speed microelectronics demands high mobility semiconductors such as Ge. We are exploring how to process high-k oxides on Ge to minimize defects that trap charge. For Ge doped …
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