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Showing 1 to 10 of 10 for “"High-κ"”.

  1. Dielettrici high-κ Al-based per 4H-SiC tramite Atomic Layer Deposition

    … di isolanti ad ad alta costante dielettrica (high-k), alluminum-based, depositati su 4H-SiC tramite thermal e plasma enhanced-Atomic Layer Deposition (ALD). In particolare, è stata studiata la deposizione di ossido di alluminio (Al2O3), nitruro di alluminio (AlN), le loro combinazioni in …

    catania Repository record for Dielettrici high-κ Al-based per 4H-SiC tramite Atomic Layer Deposition (opens in a new tab)

  2. Trapping of hydrogen in Hf-based high κ dielectric thin films for advanced CMOS applications.

    In recent years, advanced high κ gate dielectrics are under serious consideration to replace SiO2 and SiON in semiconductor industry. Hafnium-based dielectrics such as hafnium oxides, oxynitrides and Hf-based silicates/nitrided silicates are emerging as some of the most promising alternatives to …

    unt Repository record for Trapping of hydrogen in Hf-based high κ dielectric thin films for advanced CMOS applications. (opens in a new tab)

  3. Spectroscopic characterisation of high dielectric constant materials on semiconducting surfaces

    … of the accumulation capacitance of GaAs high dielectric constant (high-κ) MOS devices by the use of a passivating silicon interfacial layer has been investigated. It has typically been assumed that this affect is due to a high interface state density and associated Fermi level pinning …

    dcu Repository record for Spectroscopic characterisation of high dielectric constant materials on semiconducting surfaces (opens in a new tab)

  4. Experimental investigation of carrier mobility degradation in metal oxide semiconductor field effect transistors of high permittivity gate dielectrics

    … aggressive scaling gives rise, among others, to high gate tunnelling currents in contemporary silicon dioxide (SiO2) based Metal-Oxide- Field Effect Transistors (MOSFETs). SiO2 is therefore expected to be replaced in future technologies with alternative dielectrics. Several dielectrics with high …

    de-montfort Repository record for Experimental investigation of carrier mobility degradation in metal oxide semiconductor field effect transistors of high permittivity gate dielectrics (opens in a new tab)

  5. Defect and electrical properties of high-K̳ dielectric Gd₂O₃ for magneto-ionic and memristive memory devices

    While high-[subscript K] dielectrics utilized in CMOS technology are noted for their highly insulating characteristics, they have demonstrated surprising electrolytic behavior as key components in a variety of thin film memory devices, including those based on magneto-ionic and memristive behavior. …

    mit Repository record for Defect and electrical properties of high-K̳ dielectric Gd₂O₃ for magneto-ionic and memristive memory devices (opens in a new tab)

  6. Large-scale growth, fluorination, clean transfer, and layering of graphene and related nanomaterials

    … biomolecules. It is determined that monolayer, high-quality graphene growth by chemical vapor deposition (CVD) on Cu depends on the substrate’s crystallography, with few-defect, monolayer graphene growing on Cu(111). Functionalizing CVD graphene with XeF2 produces fluorinated graphene (FG) with …

    uiuc Repository record for Large-scale growth, fluorination, clean transfer, and layering of graphene and related nanomaterials (opens in a new tab)

  7. Statistical modeling and simulation of variability and reliability of CMOS technology

    <p>The introduction of High-κ Metal Gate transistors led to higher integration density, low leakage current, and faster switching speed. However, this transition in technology roadmap brought about new failure mechanisms such as Positive Bias Temperature Instability and Stress Induced Leakage …

    purdue-thes Repository record for Statistical modeling and simulation of variability and reliability of CMOS technology (opens in a new tab)

  8. Band Engineering of Advanced Materials for Semiconductor Devices

    … effect. A similar investigation involving high-κ CaF<sub>2</sub> is carried out, which confirms the accuracy of the sX method in characterising wide band gap materials. Moreover, the computed electronic properties of Si–CaF<sub>2</sub> and metal–CaF<sub>2</sub> interfaces obtained using the …

    cambridge Repository record for Band Engineering of Advanced Materials for Semiconductor Devices (opens in a new tab)

  9. Investigation into digital circuit design with GaAs/Ga2O3 heterostructure MOSFETs

    … mode, heterostructure MOSFETs, with a high-κ dielectric (Ga2O3), and an InGaAs channel. Historically silicon CMOS technology has been the natural choice for digital circuits, however the realisation of GaAs MOSFET digital circuits could allow full integration of RF, optoelectronic and …

    glasgow Repository record for Investigation into digital circuit design with GaAs/Ga2O3 heterostructure MOSFETs (opens in a new tab)

  10. Hybrid-gate deep depletion mosfet high-k zro2/diamond-based power devices

    … devices, making them durable and reliable in high power environments is the key to the efficient low-carbon electrical energy production and distribution for our future energy system, eliminating the auxiliary systems and reducing the losses. Despite silicon is a well-established material it …

    cadiz Repository record for Hybrid-gate deep depletion mosfet high-k zro2/diamond-based power devices (opens in a new tab)