Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 14 of 14 for “"High switching speed"”.
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Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices
… systematically in this thesis. The static and switching characteristics of the two switches have firstly been characterized to get the basic device information. Specific issues in the respective characterization process have been explored and discussed. Many of the characterization procedures …
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An evaluation of indium antimonide quantum well transistor technology
Motivated by the super high electron mobility of Indium Antimonide (InSb), researchers have seen great potential to use this new material in high switching speed and low power transistors. In Dec, 2005, Intel and its partner, QinetiQ, Ltd, announced 85nm gate length enhancement and depletion mode …
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Design of a 350 kW Silicon Carbide Based 3-phase Inverter with Ultra-Low Parasitic Inductance
… present a design for a low parasitic inductance, high power density 3-phase inverter using silicon-carbide power modules for traction application in the electric vehicles with a power rating of 350 kW. With the market share of electric vehicles continuing to grow, there is a great opportunity for …
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Tunneling nanoelectromechanical switches based on compressible self-assembled molecules
… current ratio, small subthreshold slope and high robustness in harsh environments. However, strong van der Waals interaction at the nanoscale usually results in high hysteresis and the risk of stiction failure, thereby bringing about an inevitably high actuation voltage and unfavorable …
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Formation and Rupture of Nanofilaments in Metal/TaOx/Metal Resistive Switches
… scaling potential, low power consumption, high switching speed, good retention and endurance properties. Although, various mechanisms have been proposed to explain the switching behavior in CBRAM devices, i.e. metal ion migration and subsequent formation and rupture of conductive filament, …
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Super-Resolution Fluorescence Microscopy using Transparent Waveguide Chips
… come with their own trade-offs, such as imaging speed vs. achieved resolution or live cell imaging feasibility. In order to achieve axial super-resolution, Total internal reflection fluorescence (TIRF) is often used. Total internal reflection (TIR) of light reflected at the boundary to the sample …
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Mechanisms, Conditions and Applications of Filament Formation and Rupture in Resistive Memories
… memory (RRAM), based on a two-terminal resistive switching device with a switching element sandwiched between two electrodes, has been an attractive candidate to replace flash memory owing to its simple structure, excellent scaling potential, low power consumption, high switching speed, and good …
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Flexible and substrate-free optoelectronic devices based on III-V semiconductor nanowires
… composition, make them particularly suited for high-performance opto-electronic devices. Since epitaxial growth is on expensive, brittle, crystalline substrates, the field of flexible devices has been little explored in the context of III-V nanowires. In order to fully exploit these properties …
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The Investigation of Inorganic Co Based ReRAM Devices and Organic Cu Doped PANI-CSA Top Electrode Based ReRAM Devices
Recently, the resistance switching random access memory (ReRAM) in several MIM systems has been studied extensively for applications to the next generation non-volatile memory (NVM) devices and memristors since the scaling of conventional memories based on floating gate MOSFETs is getting …
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Nonlinear Photonics in Waveguides for Telecommunications
… to deal with massive data flows. Generating high bandwidth signals (> 40 GHz) using conventional modulation techniques is hindered by material limitations and fabrication complexities. Similarly, controlling such high bandwidths in both the temporal and spectral domain becomes more …
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Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform
… scaling potential, low power consumption, high switching speed, and good retention, and endurance properties, Resistive Random Access Memory (RRAM) is one of the prime candidates to supplant current Nonvolatile Memory (NVM) based on the floating gate (FG) MOSFET transistor, which is at the …
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Application of High-Power Snubberless Semiconductor Switches in High-Frequency PWM Converters
For many years, power electronics in the high-power area was performed with extremely slow semiconductor switches. These switches, including the thyristor and the Gate Turn-Off (GTO) thyristor, had the capacity to handle very high voltages and currents but lacked the ability to perform high …
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High-Efficiency and High-Power Density DC-DC Power Conversion Using Wide Bandgap Devices for Modular Photovoltaic Applications
… Modular power conversion system has the highest efficiency of maximum power point tacking (MPPT), which can transfer more solar power to electricity. However, this system suffers the drawbacks of low power conversion efficiency and high cost due to a large number of power electronics …
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Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array
… type of non-volatile memories, such as resistive switching memories, have lately found increased attention by both industry and academia. Resistive switching memory (ReRAM) is being considered one of the prime candidates for next-generation non-volatile memory due to relatively high switching …