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Showing 1 to 2 of 2 for “"High electron mobility transistor structures"”.

  1. Nanoscale quantification of stress and strain in III-V semiconducting nanostructures

    Jones, Eric James, Ph. D. Massachusetts Institute of TechnologyMassachusetts Institute of Technology2015

    III-V semiconducting nanostructures present a promising platform for the realization of advanced optoelectronic devices due to their superior intrinsic materials properties including direct band gap energies that span the visible light spectrum and high carrier mobilities. Additionally, the …

    mit Repository record

  2. Structure-Property Relationships in Nitride Electronic Devices

    Chen, ChenUniversity of Cambridge2025

    … based semiconductors can be used to fabricate high electron mobility transistors (HEMTs) which are typically used for power and radio frequency applications. To reach the full potential of GaN-based HEMT structures, which often have numerous material defects, nanoscale electrical …

    cambridge Repository record