Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"High angle annular dark field (HAADF)"”.
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Gold-containing bimetallicnanoparticles
… (TEM) and scanning TEM (STEM) combined with high angle annular dark field (HAADF) imaging, energy dispersive X-ray elemental mapping using a silicon drift detector (SDD), tomography, and electron energy loss spectroscopy (EELS). Sizes and shapes of the Cu-Au, Pd-Au, and Pt-Au nanoparticles …
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Quantitative High-angle Annular Dark Field Scanning Transmission To Electron Microscopy For Materials Science
… and to analyze crystal and defect structures. High-angle annular dark field (HAADF) STEM imaging using atomic number (Z) contrast has proven capable of resolving atomic structures with better than 2 A lateral resolution. In this work, the HAADF STEM imaging mode is used in combination with …
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Effects Of Bond Coat Surface Preparation On Thermal Cycling Lifetime And Failure Characteristics Of Thermal Barrier Coatings
… engines to protect the underlying metal from high operating temperature so as to improve the durability of the components and enhance the engine efficiency. However, since the TBCs always operate in a demanding high-temperature environment of aircraft and industrial gas-turbine engines, a …
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Probing nano-scale atomic and electronic structures of iron-based superconductors
The discovery of iron-based high-Tc superconductors has attracted renewed interests in unconventional superconductivity after the intense research in the past two decades on cuprates. Similar to the cuprate superconductors, the iron-based superconductors exhibit high Tc that the …
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Nanoscale characterization of InSb/InAs novel functional semiconductor nanostructures for LEDs / Caracterización a nanoescala de nanoestructuras funcionales novedosas de InSb/InAs para LEDs
… layers of these LEDs as these QDs offer the highest level of optoelectronic efficiency. Among various III-V epitaxial QDs, InSb/InAs QDs emit light at the mid-infrared (MIR) range (3-5 µm) through the tuning of Sb composition and as a result, these QDs can be used to detect various hazardous …
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Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection
… thick layers, theoretical promises of high device performance of these structures have yet to be realized, primarily due to the Shockley-Read-Hall recombination process which shortens the minority carrier lifetime. The microscopic origin responsible for the short carrier lifetime is …
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Strengthening of metastable beta titanium alloys
… formed by rapid cooling from the $\beta$ phase field. The classical theory of athermal $\omega$ formation is based upon a diffusion-less mechanism in which consecutive pairs of $\{111\}$$_{\beta}$ planes collapse together. However, latest high-resolution electron microscope observations have …