Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 85 for “"High Electron Mobility Transistors"”.
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Degradation mechanisms of GaN high electron mobility transistors
In spite of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power applications, GaN HEMTs operate at high voltage where good reliability is essential. However, physical understanding of the fundamental reliability mechanisms of …
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Electric field engineering in GaN high electron mobility transistors
In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase the frequency to mm-wave frequencies. The goal of this thesis has been to …
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Deeply-scaled GaN high electron mobility transistors for RF applications
… of large critical breakdown field and high electron velocity, GaN-based high electron mobility transistors (HEMTs) have great potential for next generation high power RF amplifiers. The performance of GaN devices has increased continuously in the last two decades. However, in spite of …
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Reliability of GaN high electron mobility transistors on silicon substrates
GaN High Electron Mobility Transistors are promising devices for high power and high frequency applications such as cellular base stations, radar and wireless network systems, due to the high bandgap and high breakdown field of GaN. However, their reliability is the main hindrance to the deployment …
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Physics of electrical degradation in GaN high electron mobility transistors
The deployment of GaN high electron mobility transistors (HEMT) in RF power applications is currently bottlenecked by their limited reliability. Obtaining the required reliability is a difficult issue due to the high voltage of operation. In order to improve reliability, it is essential to develop …
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Electrical degradation of InAlAs/InGaAs metamorphic high electron mobility transistors
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
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Reliability of W-Band InAIN/GaN High Electron Mobility Transistors
AlGaN/GaN High Electron Mobility Transistors (HEMTs) have enjoyed tremendous market growth in RF power amplifiers over the past decades. In the quest for enhancing the operating frequency of GaN HEMTs, there has been a great effort to scale down the gate length. Maintaining acceptable short-channel …
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Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors
… of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Chapter 2 reports the development of in situ vacuum anneal and SiH4 or SiH4+NH3 passivation to realize high quality metal gate/high-k dielectric stacks on GaN surface using a multi-chamber …
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Limiting physics of mm-wave InP power high electron mobility transistors
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
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Dielectric reliability in GaN metal-insulator-semiconductor high electron mobility transistors
GaN Metal Insulator Semiconductor High Electron Mobility Transistors (GaN MIS-HEMTs) show excellent promise as high voltage power transistors that can operate efficiently at high temperatures and frequencies. However, current GaN technology faces several obstacles, one of which is Time-Dependent …
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The development of sub-25 nm III-V High Electron Mobility Transistors
High Electron Mobility Transistors (HEMTs) are crucially important devices in microwave circuit applications. As the technology has matured, new applications have arisen, particularly at millimetre-wave and sub-millimetre wave frequencies. There now exists great demand for low-visibility, security …
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Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors
… to RF and microwave communication, as well as high power switching. The first part of this thesis discusses planar AlGaN/GaN transistors. GaN is a piezoelectric material, and changes in mechanical stress result in a change in the charge density which in turn affects the maximum current in …
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Advanced Processing Techniques for Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors
… the research undertaken in this dissertation highlights the potential of GaN-based transistors for next generation millimeter-wave applications, and possibly digital applications.
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Advanced process development for contacts to algan/gan high electron mobility transistors (HEMTS)
High work function metals--Ni, Pt, Ir, and Au--were comparatively studied as Schottky metallizations to GaN and AlGaN/GaN heterostructures. Ni/Au, Ni/Pt/Au, Ir/Au, Ir/Pt/Au and Pt/Au Schottky diodes were fabricated on GaN and AlGaN/GaN substrates. Schottky barrier heights ranging from 0.8 to 0.9 eV …
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Gate-geometry Dependence of Enhancement-mode p-GaN Gate High Electron Mobility Transistors
While GaN-based transistors for power electronics have in many situations demonstrated technological superiority over conventional Si based devices, the development of GaN power electronics has only scratched the surface of the possibilities that lie ahead. The most promising device structure for …
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Dielectric reliability in high-voltage GaN metal-insulator-semiconductor high electron mobility transistors
As the demand for more energy-efficient electronics increases, GaN has emerged as a promising transistor material candidate for high-voltage power management applications. The AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT) constitutes the most suitable device …
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Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics
… achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important issues to be solved for millimeter-wave (30 ~ 300 GHz) applications. One of the key challenges is to improve its high frequency characteristics. In this thesis, we particularly …
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Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress
GaN HEMTs (High Electron Mobility Transistors) are promising candidates for high power and high frequency applications but their reliability needs to be established before their wide deployment can be realized. In this thesis, degradation mechanisms of GaN HEMTs under high-power and …
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Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors
… some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for high frequency applications. In spite of their excellent material properties, GaN-based HEMTs are still below the theoretical predictions in their high frequency performance. If the frequency …
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Time dependent dielectric breakdown in novel GaN metal-insulator-semiconductor high electron mobility transistors
Power electronics is expanding as we automate and electrify our households and step into mainstream electric vehicles. Recently, GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have been increasing in popularity for high voltage power electronics applications …
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