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Showing 1 to 8 of 8 for “"HgTe"”.

  1. Phase coherent transport phenomena in HgTe quantum well structures

    … the SO Berry phase directly. In manganese doped HgTe QWs two different effects simultaneously cause spin splitting: the giant Zeeman and the Rashba effect. By analysing the Shubnikovde Haas oscillations and the node positions of their beating pattern, it has been possible to separate these two …

    wurz-thes Repository record for Phase coherent transport phenomena in HgTe quantum well structures (opens in a new tab)

  2. Elektronische Zustände in Typ-III-Halbleiterheterostrukturen

    … Schicht von 30 °A bis 100 °A aus dem Halbmetall HgTe, dem Trogmaterial, in eine Legierung aus Hg(1-x)Cd(x)Te, dem Barrierenmaterial, eingebettet und zu einem Übergitter aufgebaut. Zweidimensionale Typ-III-Halbleiterheterostrukturen, wie die HgTe-Hg(1-x)Cd(x)Te-Quantentrogstrukturen und …

    wurz-thes Repository record for Elektronische Zustände in Typ-III-Halbleiterheterostrukturen (opens in a new tab)

  3. Cd3P2 Quantum Dots As Sources for Quantum Emission and Detection of Near-IR Radiation

    … PbS, PbSe), mercury chalcogenides (e.g., HgSe, HgTe), and InAs are the primary near-IR capable CQDs researched, but these species suffer from setbacks such as long carrier lifetimes (>1 µs, PbS/PbSe), toxic precursors and products (HgSe/HgTe), and non-trivial syntheses due to precursor …

    alabama Repository record for Cd3P2 Quantum Dots As Sources for Quantum Emission and Detection of Near-IR Radiation (opens in a new tab)

  4. Theory of topological insulators and its applications

    … the study of insulators? ^ This thesis examines HgTe and Bi2Te3 as 2D and 3D TIs respectively. Design principles for utilizing HgTe based 2D TIs as a switch and tuning the critical width is explained. Further the surface states, which are the counterpart of the edge states in a 3D TI depend on …

    purdue-thes Repository record for Theory of topological insulators and its applications (opens in a new tab)

  5. Substrate cleaning using a remote hydrogen rf-plasma

    … the removal of these layers the H-plasma etches HgTe, in the case of CMT, and CdTe, in the case of CZT. For silicon, the remote rf H-plasma was found to be ineffective at removing either the native oxide, or the oxide left by standard wet chemical processing. The hydrocarbon impurities were …

    wvu Repository record for Substrate cleaning using a remote hydrogen rf-plasma (opens in a new tab)

  6. Optische Charakterisierung von II-VI-Halbleiter-Oberflächen in Kombination mit First-Principles-Rechnungen

    … MnTe(100)-Oberfläche und die Hg-reiche c(2x2) HgTe(100)-Oberfläche untersucht. Schließlich wurde der Wachstumsstart von CdSe auf der BeTe(100)-Oberfläche im Bereich weniger Monolagen (1-5 ML) CdSe analysiert, wobei die hohe Empfindlichkeit der Ramanspektroskopie bereits den Nachweis einer …

    wurz-thes Repository record for Optische Charakterisierung von II-VI-Halbleiter-Oberflächen in Kombination mit First-Principles-Rechnungen (opens in a new tab)

  7. Organometallic Synthesis Kinetics of CdSe Quantum Dots

    CdSe quantum dots produced by organometallic synthesis are useful as tunable emitters for photonic devices and as multi-colored protein markers for biomedical imaging, applications requiring bright and narrow emission. A diffusion-limited model helped monitor growth rates via photoluminescence and …

    vt Repository record for Organometallic Synthesis Kinetics of CdSe Quantum Dots (opens in a new tab)

  8. Methods for Accurately Modeling Complex Materials

    We investigate and benchmark a variety of computational methods for accurately modeling complex materials. We focus on three specific methods used to examine systems with real world interest: screened hybrid density functional theory (DFT) used for accurate treatment of band gaps in semiconductors, …

    ohiolink Repository record for Methods for Accurately Modeling Complex Materials (opens in a new tab)