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Showing 1 to 1 of 1 for “"HfAlOx"”.
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Reliability study of Zr and Al incorporated hf based high-k dielectric deposited by advanced processing
… distribution of Al are observed by varying the HfAlOx layer thickness and it is found that < 2% Al/(Al+Hf)% incorporation can result in up to 18% reduction in the average EOT along with up to 41 % reduction in the gate leakage current as compared to the dielectric with no Al content. On the …