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Showing 1 to 1 of 1 for “"Hf1-xZrxO2"”.
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Reliability study of Zr and Al incorporated hf based high-k dielectric deposited by advanced processing
Hafnium-based high-x dielectric materials have been successfully used in the industry as a key replacement for SiO_2 based gate dielectrics in order to continue CMOS device scaling to the 22-nm technology node. Further scaling according to the device roadmap requires the development of oxides with …