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Showing 1 to 5 of 5 for “"Heterostruktur-Bauelement"”.
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Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
Heterostructure field effect transistors (HFETs) on the basis of Group III nitrides are increasingly gaining importance for the application as RF power amplifier devices. A common feature of the layer structure of such transistors is a GaN buffer which is usually deposited on non-native substrates, …
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Fabrication and characterization of AlGaN/GaN high electron mobility transistors
The task of this work was to fabricate and characterize AlGaN/GaN HEMTs on sapphire and silicon substrates. For this reason the HEMT fabrication technology had to be developed and optimized on AlGaN/GaN heterostructures grown on sapphire and silicon substrates. The optimization of AlGaN/GaN …
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AlGaN/GaN MBE 2DEG heterostructures : interplay between surface-, interface- and device-properties
Due to their wide band gap and high bond strength, the III-N semiconductors can be used for violet, blue and green light emitting devices as well as for high temperature and high power transistors. In comparison to conventional AlGaAs/GaAs heterostructures the AlGaN/GaN material system offers new …
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Einfluss der Schichteigenschaften auf das elektrische und optoelektrische Verhalten von AlGaN-GaN-HEMT-Transistoren
The mismatch of the lattice constants and of the thermal expansion coefficients between gallium nitride (GaN) and its substrates like sapphire, silicon and silicon carbide is responsible for a high concentration of defects in AlGaN/GaN layers. The influence of these electrically active centres …
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Design and development of radiation-resistant and low-noise semiconductor transistors for applications in high frequency communication systems
In the frame of this work, the fundamental properties of GaN/AlGaN HEMT structures have been investigated in order to optimize their performance in high power microwave devices. A number of properties have been studied, starting from DC transport properties in bare 2DEG channels up to investigation …