Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 45 for “"Heterojunction bipolar transistors"”.
-
Modeling and Characterization of Heterojunction Bipolar Transistors
Heterojunction bipolar transistor (HBTs) offer several advantages over their homo-junction counterparts resulting from the use of semiconductors in the emitter and base with different bandgaps. These advantages include high current gain, large cut-off frequency and short gate delay in digital logic …
-
High-Performance Indium Gallium Phosphide/gallium Arsenide Heterojunction Bipolar Transistors
To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and …
-
An investigation of heterojunction bipolar transistors by molecular beam epitaxy
… the growth, characterization, and modeling of heterojunction bipolar transistors (HBTs). The superior high current handling capacity and high operation frequency of heterojunction bipolar transistors have attracted a great deal of interest in millimeter-wave and high-speed digital applications. …
-
GaAsP/InGaP heterojunction bipolar transistors for III-V on Si microelectronics
GaAs-based transistors are capable of operating at high frequency with low noise, and are produced in large volumes for a wide range of applications including microwave frequency ICs for input/output in mobile devices. However, Si CMOS still holds an advantage for digital logic due to wide market …
-
Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments
Extreme environments pose unique challenges to all types of electronics. These extreme environments can cover a variety of different conditions, including, but not limited to, low temperatures, high temperatures, radiation, pressure etc. One technology that has shown promising robustness in extreme …
-
Submicron Scaling in Indium Phosphide/indium Gallium Arsenide Single Heterojunction Bipolar Transistors
Measurement-based characterization of SHBTs scaled down to 0.35 mum was performed, and detailed understanding of do and RF scaling properties was developed. Important scaling phenomena that emerge as the emitter width is scaled to the deep submicron regime were identified and analyzed. A unique …
-
Vertical profile engineering and reliability study of silicon-germanium heterojunction bipolar transistors
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
-
Minority Electron Base Transport in Heterojunction Bipolar Transistors Determined by Magneto-Transport Measurements
The magneto-transport method is a technique that allows the simultaneous measurement of the minority electron mobility in the base of the HBT and the dc current gain of the device. The minority electron lifetime can be determined using these two measurements. Therefore, this technique is very …
-
Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments
… extensive modifications to the structure of the transistors and results in significant trade-offs. The present work investigates, with measurements and TCAD simulations, the performance and reliability of SiGe heterojunction bipolar transistors fabricated on silicon on insulator substrates with …
-
Low-Pressure Metalorganic Chemical Vapor Deposition of High-Gain InGaP/GaAs Heterojunction Bipolar Transistors
… emitter and cap growth conditions on the gain of heterojunction bipolar transistors (HBTs) was studied by annealing to simulate the prolonged growth of HBTs with a heavily carbon-doped base. The results indicate that postgrowth annealing at a temperature close to the growth temperature of the …
-
Submicron Scaling of Indium Phosphide/indium Gallium Arsenide Heterojunction Bipolar Transistors Toward Terahertz Bandwidths
This work extends the operating speed of InP HBTs to frequencies of fT = 604 GHz though aggressive delay reductions and advanced fabrication processes. Delay reduction is employed by a combination of vertical scaling, lateral scaling, and epitaxial engineering to reduce the transit and charging …
-
Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy
… compounds and devices, including field effect transistors (FETs) and hetero-junction bipolar transistors (HBTs), was explored using gas-source molecular beam epitaxy (MBE). The first and second parts of the dissertation detail the growth of InAsSb and InGaSb as the channel materials for n- and …
-
Design and fabrication of high-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors
Restriction data tranferred 2014-07-01T11:18:09-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission
-
Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization
… theory of positive feedback due to the enhanced heterojunction barrier effect at deep cryogenic temperatures is proposed to explain such effects. Intricate design of the germanium and base doping profiles can greatly suppress both carrier freezeout and the heterojunction barrier effect, leading …
-
Investigation of transport mechanisms for n-p-n InP/InGaAs/InP double heterojunction bipolar transistors
A more complete model for InP/InGaAs Double Heterojunction Bipolar Transistors (DHBT) is obtained in this thesis by physically analyzing the transport process of the main current components. The potential distribution of the energy barrier constitutes a fundamental analytical concept and is …
-
InP/InGaAs Heterojunction Bipolar Transistors and Field-Effect Transistors Grown by Gas -Source Molecular Beam Epitaxy
Finally, the thermal degradation of heavily C-doped InGaAs and its effects on dc properties of InGaAs/InP HBTs have been studied. The degradation of the junction properties and current gain-base sheet resistance ratio can be attributed to the formation of C precipitates. These findings are …
-
Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications
Dynamic range characterization of double-heterojunction bipolar transistors is examined. The measurement procedures are detailed, along with a novel procedure for calibrating load-pull measurements using all on-chip calibration standards. The use of all on-chip calibration standards can reduce …
-
Analysis of and process development for high-frequency indium gallium phosphide/gallium arsenide heterojunction bipolar transistors
… system has been investigated for use in heterojunction bipolar transistor applications. This material possesses several properties which make it attractive as a potential replacement for AlGaAs as the wide band gap emitter material. These properties include the availability of highly …
-
Design, Fabrication, and Modeling of Indium Phosphide Double-Heterojunction Bipolar Transistors With Sub-Millimeter Wave Cutoff Frequency
… of this work is the design and fabrication of heterojunction bipolar transistors based on InP and the III-V compounds compatible with epitaxial growth on this substrate. Scaling and compositional variations of the transistor material layers are studied with the goal of improving device …
-
Modeling of In(0.49)Ga(0.51)P/GaAs Heterojunction Bipolar Transistors for ADC and MMIC Circuit Design
State-of-the-art monolithic Ka-band voltage-controlled oscillators were designed, tested and fabricated. Power output was $>$5 dBm and the phase noise was $<$90 dBc/Hz at 100 kHz. The phase noise and output power are also tested vs. the ambient temperature of the oscillator. Another design is …
Page 1 of 3