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Showing 1 to 20 of 22 for “"Heterojunction bipolar transistor"”.
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Compound Semiconductor Power Heterojunction Bipolar Transistor Technology
This work will conclude by discussing the lingering issues with the GaN project and the methods in which to solve these issues. It will also discuss the implications of the power amplifier analysis.
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The AlInP material system in heterojunction bipolar transistor technology
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
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Physical modeling of base carrier lifetime and frequency response of heterojunction bipolar transistor
… the physical modeling of the quantum-well heterojunction bipolar transistor, known as the transistor laser. By revising the conventional bipolar junction transistor charge control model, this work accounts for the degraded base transfer ratio, which contrasts with the constant base …
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Design, Fabrication and Characterization of a GaAs/InxGa1-xAs/GaAs Heterojunction Bipolar Transistor
Designs for PnP GaAs/InxGa1-xAs/GaAs heterojunction bipolar transistors (HBTs) are proposed and simulated with the aid of commercial software. Band diagrams, Gummel plots and common emitter characteristics are shown for the specific case of x=1, x=0.7, and x linearly graded from 0.75 to 0.7. Of the …
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A heterojunction bipolar transistor with stepwise allog-graded base : analysis, design, fabrication, and characterization
(cont.) features but the device self-heating turned out to be crucial for the longevity of the base micro-airbridges. The short lifetime of the base micro-airbridges was prohibitive for the realization of high frequency measurements. This work serves as the foundation for the implementation of …
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A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs
… in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. Technology scaling of SiGe HBTs for high frequency performance results on lower breakdown voltages, making operating voltage constraints an increasingly vital reliability consideration in …
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Modeling and Characterization of Heterojunction Bipolar Transistors
Heterojunction bipolar transistor (HBTs) offer several advantages over their homo-junction counterparts resulting from the use of semiconductors in the emitter and base with different bandgaps. These advantages include high current gain, large cut-off frequency and short gate delay in digital logic …
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Analysis of and process development for high-frequency indium gallium phosphide/gallium arsenide heterojunction bipolar transistors
… system has been investigated for use in heterojunction bipolar transistor applications. This material possesses several properties which make it attractive as a potential replacement for AlGaAs as the wide band gap emitter material. These properties include the availability of highly …
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Compact device modeling and millimeter-wave oscillator design for III-V HBT technology
The double heterojunction bipolar transistor (DHBT), through its bandgap engineering, possesses several very favorable traits that allow it to operate at high frequencies while still maintaining impressive breakdown, linearity, and current driving characteristics. These traits make it a highly …
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DC and AC modeling of heterostructure bipolar transistors (HBTS)
Starting with a homojunction or graded heterojunction bipolar transistor, a complete model for the dc and ac performances of the device is developed based on the Ebers-Moll methodology. The formulation is modified to include the abrupt single HBT, by introducing the effects of the conduction band …
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High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications
Heterojunction bipolar transistors (HBTs) are widely used in high-speed mixed-signal, radio frequency, and communication ICs because of their high speed, high breakdown voltage, and high efficiency capabilities compared with Si bipolar junction transistors (BJTs) and complementary metal-oxide …
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Monolithic electronic-photonic integration of the light-emitting transistor
… to intra-chip connection. The light-emitting transistor (LET) has good potential as an optical signal source for both applications because of its tilted charge dynamic mechanism in the base terminal, which enables fast optical recombination lifetime. In 2003, Holonyak and Feng discovered the …
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Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments
<p>The silicon germanium heterojunction bipolar transistor, SiGe HBT, has very high frequency response but limited voltage range. Commercial communication applications in wireless and system integration have driven the development of the SiGe HBT. However, the device's excellent electrical …
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The design and fabrication of an inp-based transistor-injected quantum cascade laser
… control leave room for improvement. The transistor-injected quantum cascade laser (TI-QCL) presents a novel three-terminal QCL design that seeks to address these restrictions in order to provide a more practical and efficient solution to the MWIR and LWIR problem space. By placing the …
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An HBT magnetic sensor with integrated 3-dimensional magnetic structures
… on magnetic field sensors based on an InP/InGaAs heterojunction bipolar transistor (HBT) which has been fabricated to be compatible with high frequency epilayer structure and processes. In this work, the complete fabrication process for the HBT magnetic sensors has been developed, using standard, …
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The transistor-injected quantum cascade laser
… space optical communication. The light-emitting transistor and the transistor laser are novel three-terminal photonic devices based on heterojunction bipolar transistors. In the direct-bandgap base of a light-emitting transistor the electron-hole recombination is utilized for optical emission. In …
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Light emission and current instabilities in transistor-injected quantum cascade structures
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2025-08-01
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Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications
… circuits composed of compound semiconductor heterojunction bipolar transistors (HBTs). The subject of this work is the design and fabrication of HBTs based on InP and the III-V compounds compatible with epitaxial growth on this substrate. The hot electron injection effect is incorporated to …
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Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization
… theory of positive feedback due to the enhanced heterojunction barrier effect at deep cryogenic temperatures is proposed to explain such effects. Intricate design of the germanium and base doping profiles can greatly suppress both carrier freezeout and the heterojunction barrier effect, leading …
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Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments
… extensive modifications to the structure of the transistors and results in significant trade-offs. The present work investigates, with measurements and TCAD simulations, the performance and reliability of SiGe heterojunction bipolar transistors fabricated on silicon on insulator substrates with …
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