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Showing 1 to 3 of 3 for “"Heterojunction Field Effect Transistor"”.
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Low Dislocation Density Gallium Nitride Templates and Their Device Applications
… SiN, nanonetworks are not suitable for heterojunction field effect transistor (HFET) applications due to degenerate GaN:Si layer which serves as parallel conduction channel. This dissertation discusses the growth of low dislocation density GaN templates, by using the in situ SiNx …
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Third Order Nonlinearity In III-Nitride Microwave Switches
… and satellite communications etc. III-Nitride Heterojunction Field Effect Transistor (HFET) microwave switches have demonstrated significant advantages over most other switch types including pin- diodes GaAs high electron mobility transistors (HEMT) and MEMS due to high breakdown, very low …
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Investigation of Surface States and Device Surface Charging in Nitride Materials Using Scanning Kelvin Probe Microscopy
… illumination up to 0.6 eV surface photo voltage effect could be observed in some samples, which further indicates that surface band bending is very likely larger than 0.6 eV, i.e. close to 1 eV. Reactive Ion Etching (RIE)damage was observed to increase surface band bending by about 0.4 eV where …